S. Thijs

发表

A study of breakdown mechanisms in electrostatic actuators using mechanical response under EOS-ESD stress

Mirko Scholz, Dimitri Linten, Sandeep Sangameswaran, 2009, 2009 31st EOS/ESD Symposium.

Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies

Dimitri Linten, Jonathan Borremans, Steven Thijs, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

HBM ESD robustness of GaN-on-Si Schottky diodes

D. Linten, S. Decoutere, G. Groeseneken, 2011, EOS/ESD Symposium Proceedings.

Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs

G. Meneghesso, E. Simoen, C. Claeys, 2010, IEEE Transactions on Device and Materials Reliability.

Transient voltage overshoot in TLP testing — Real or artifact?

Philippe Roussel, Steven Thijs, Guido Groeseneken, 2005, 2005 Electrical Overstress/Electrostatic Discharge Symposium.

Imaging in Short-Wave Infrared with 1.82 μm Pixel Pitch Quantum Dot Image Sensor

Yunlong Li, D. Cheyns, R. Stahl, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

A SCR-based ESD protection for MEMS — Merits and challenges

D. Linten, G. Groeseneken, I. De Wolf, 2011, EOS/ESD Symposium Proceedings.

On-wafer human metal model ‚Äì system-level ESD stress on component level

Mirko Scholz, Dimitri Linten, M. Sawada, 2008 .

Exploring ESD challenges in sub-20-nm bulk FinFET CMOS technology nodes

Mirko Scholz, Dimitri Linten, Geert Hellings, 2013, 2013 35th Electrical Overstress/Electrostatic Discharge Symposium.

Behavior of RF MEMS switches under ESD stress

Dimitri Linten, Sandeep Sangameswaran, Jeroen De Coster, 2010, Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010.

ESD issues in MEMS: A case study in micromirrors

Chris Van Hoof, J. De Coster, Mirko Scholz, 2008 .

66‐2: Invited Paper: QD‐Based Sensors for Infrared Imaging

Yunlong Li, T. Ke, P. Malinowski, 2021, SID Symposium Digest of Technical Papers.

Technology-aware ESD-reliable RF CMOS circuit design

Natarajan Mahadeva Iyer, Mirko Scholz, Dimitri Linten, 2006 .

A 4.5 kV HBM, 300 V CDM, 1.2 kV HMM ESD protected DC-to-16.1 GHz wideband LNA in 90 nm CMOS

G. Groeseneken, M. Okushima, J. Borremans, 2009, 2009 31st EOS/ESD Symposium.

The Solar Orbiter Radio and Plasma Waves (RPW) instrument

P. Astier, D. Plettemeier, X. Bonnin, 2020, Astronomy & Astrophysics.

60 GHz low noise amplifiers with 1 kV CDM protection in 40 nm LP CMOS

P. Wambacq, Ming-Hsiang Song, Jen-Chou Tseng, 2012, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Impact of CMOS Scaling and Technology Options on ESD Reliability

Natarajan Mahadeva Iyer, Dimitri Linten, Steven Thijs, 2005 .

Reliability issues in MuGFET nanodevices

B. Kaczer, N. Collaert, D. Linten, 2008, 2008 IEEE International Reliability Physics Symposium.

Design Issues and Considerations for Low-Cost 3-D TSV IC Technology

Luca Benini, Federico Angiolini, Paresh Limaye, 2010, IEEE Journal of Solid-State Circuits.

A quantitative inquisition into ESD sensitivity to strain in nanoscale CMOS protection devices

Kaustav Banerjee, Dimitri Linten, Harald Gossner, 2010, 2010 International Electron Devices Meeting.

A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

P. Wambacq, A. Mercha, S. Decoutere, 2004, IEEE Journal of Solid-State Circuits.

ESD protection devices placed inside keep-out zone (KOZ) of through Silicon Via (TSV) in 3D stacked integrated circuits

Steven Thijs, G. Hellings, D. Linten, 2012, Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012.

ESD protection in finfet technologies

Steven Thijs, S. Thijs, 2011, IEEE 2011 International SOI Conference.

Characterization and Optimization of Sub-32-nm FinFET Devices for ESD Applications

R. Rooyackers, C. Duvvury, N. Collaert, 2008, IEEE Transactions on Electron Devices.

Design-driven optimisation of a 90 nm RF CMOS process by use of elevated source/drain

P. Wambacq, S. Decoutere, V. Vassilev, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Design issues and considerations for low-cost 3D TSV IC technology

Paresh Limaye, Bart Vandevelde, Eric Beyne, 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

Co-design methodology to provide high ESD protection levels in the advanced RF circuits

P. Wambacq, G. Groeseneken, M. Steyaert, 2003, 2003 Electrical Overstress/Electrostatic Discharge Symposium.

ESD protection for a 5.5 GHz LNA in 90 nm RF CMOS — Implementation concepts, constraints and solutions

P. Wambacq, G. Groeseneken, R. Degraeve, 2004, 2004 Electrical Overstress/Electrostatic Discharge Symposium.