D. As

发表

High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature

D. Hägele, J. Buss, A. Schaefer, 2014 .

Temperature dependence of the electron Landé g-factor in cubic GaN

D. Hägele, J. Buss, T. Schupp, 2015 .

g values of effective mass donors in Al x Ga 1 − x N alloys

O. Ambacher, M. Stutzmann, M. Brandt, 2001 .

Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates

Masayuki Abe, Klaus Lischka, Hiroyuki Nagasawa, 2006 .

Long room-temperature electron spin lifetimes in highly doped cubic GaN

D. Hägele, J. Buss, T. Schupp, 2010 .

Picosecond acoustics in single quantum wells of cubic GaN/(Al,Ga)N

M. Bayer, A. Akimov, D. Yakovlev, 2017 .

Laser annealing of defects in CdTe epitaxial layers

D. As, L. Palmetshofer, 1985 .

Molecular beam epitaxy of cubic III-nitrides on GaAs substrates

D. Schikora, D. As, K. Lischka, 2003 .

Carbon - an alternative acceptor for cubic GaN

U. Köhler, D. As, 2001 .

Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

U. Köhler, D. As, K. Lischka, 2001 .

Two‐dimensional electron gas in cubic Alx Ga1–xN/GaN heterostructures

M. Abe, H. Nagasawa, D. As, 2006 .

Free carrier accumulation at cubic AlGaN/GaN heterojunctions

F. Ponce, Ti Li, J. Huang, 2012 .

Molecular Beam Epitaxy of Nonpolar Cubic AlxGa1−xN/GaN Epilayers

D. As, K. Lischka, S. Potthast, 2007 .

Numerical analysis of transmission coefficient, LDOS, and DOS in superlattice nanostructures of cubic resonant tunneling MODFETs

D. As, A. Beloufa, T. Wecker, 2016 .

Numerical analysis of transmission coefficient, LDOS, and DOS in superlattice nanostructures of cubic $$\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}$$AlxGa1-xN/GaN resonant tunneling MODFETs

D. As, A. Beloufa, T. Wecker, 2016 .

Comparative study on performance of cubic AlxGa1−xN/GaN nanostructures MODFETs and MOS-MODFETs

A. B. Stambouli, D. As, A. Zado, 2013 .

Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)

F. Schwierz, M. Abe, J. Lindner, 2010 .

Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation

F. Schwierz, R. Granzner, D. As, 2009 .

Refractive index and gap energy of cubic InxGa1−xN

R. Goldhahn, U. Köhler, D. As, 2000 .

Optical properties of cubic GaN from 1 to 20 eV

C. Cobet, N. Esser, J. Bläsing, 2012 .

Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate

F. Cerdeira, D. As, K. Lischka, 2006 .

Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells

F. Cerdeira, L. Scolfaro, D. As, 2004 .

Thermal Annealing of Cubic‐InGaN/GaN Double Heterostructures

D. As, K. Lischka, J. Leite, 2003 .

Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures

L. Scolfaro, D. As, K. Lischka, 2002 .

Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers

F. Bechstedt, J. Furthmüller, L. Scolfaro, 2002 .

An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

D. Schikora, D. As, K. Lischka, 1997 .

Optical gain and stimulated emission of cleaved cubic gallium nitrite

D. Schikora, Ary A. Hoffmann, D. As, 1999 .

Optical constants of cubic GaN in the energy range of 1.5–3.7 eV

R. Goldhahn, U. Köhler, D. As, 1999 .

Time Resolved Photoluminescence of Cubic Mg Doped GaN

T. Monteiro, E. Pereira, D. Schikora, 1999 .

Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations

A. P. Lima, S. Reich, C. Thomsen, 2000 .

Spectrum of hot‐electron luminescence from high electron mobility transistors

H. Zappe, D. As, 1991 .

Femtosecond pump-probe absorption edge spectroscopy of cubic GaN

D. As, S. Espinoza, Elias Baron, 2022, 2206.02223.

Vertical design of cubic GaN-based high electron mobility transistors

F. Schwierz, R. Granzner, M. Kittler, 2011 .

Optical Properties of Germanium Doped Cubic GaN

D. Reuter, J. Gerlach, D. As, 2017 .

High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs

C. Thomsen, A. Goñi, K. Syassen, 1997 .

Phonon localization in cubic GaN/AlN superlattices

A. D. Rodrigues, D. As, M. Godoy, 2014 .

Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic AlxGa1−xN

D. Reuter, J. Gerlach, D. As, 2020, physica status solidi (b).

Incorporation of germanium for n‐type doping of cubic GaN

D. Reuter, J. Gerlach, D. As, 2017 .

Mechanical Properties of Cubic SiC, GaN and AlN Thin Films

J. Pezoldt, P. Schaaf, T. Schupp, 2012 .

Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

K. Papagelis, D. Schikora, R. Pässler, 1999 .

MBE Growth of Cubic InN

D. As, K. Lischka, J. Schoermann, 2007, cond-mat/0702140.

Infrared Ellipsometry – a Novel Tool for Characterization of Group‐III Nitride Heterostructures for Optoelectronic Device Applications

J. Off, M. Schubert, S. Einfeldt, 2001 .

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells

A. Hoffmann, D. Reuter, G. Callsen, 2018 .

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy

A. Hoffmann, D. Reuter, G. Callsen, 2016 .

Structural and optical properties of MBE‐grown asymmetric cubic GaN/AlxGa1–xN double quantum wells

D. Reuter, R. Goldhahn, M. Feneberg, 2015 .

Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN

M. Feneberg, R. Goldhahn, D. As, 2020, physica status solidi (b).

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3

M. Feneberg, R. Goldhahn, D. As, 2019, Physical Review Materials.

Characterization of the surface irregularities of cubic GaN using micro-Raman spectroscopy

S. Prawer, M. Liu, R. Brenn, 2001 .

Magnetic characterization of conductance electrons in GaN

W. Schmidt, E. Janzén, U. Gerstmann, 2010 .

Photonic devices based on wide gap semiconductors for room temperature polariton emission

D. Schikora, D. As, K. Lischka, 2004 .

Large room temperature Rabi-splitting in a ZnSe/(Zn,Cd)Se semiconductor microcavity structure

D. Schikora, D. As, K. Lischka, 2002 .

Investigation of the interface quality of GaAs/AlGaAs heterostructures

K. Köhler, K. Bachem, D. As, 1990 .

Investigation of deep levels in epitaxially grown CdS and CdTe layers

H. Sitter, A. Lopez‐Otero, D. As, 1982 .

Comparative Determination of Absolute Raman Scattering Efficiencies and Application to GaN

C. Thomsen, O. Ambacher, S. Gronemeyer, 1998 .

Low interface trapped charge density in MBE in situ grown Si3N4 cubic GaN MIS structures

J. Gerlach, D. As, A. Zado, 2012 .

In-situ growth monitoring by spectroscopy ellipsometry of MOCVD cubic-GaN(001)

H. Sitter, D. Stifter, A. Bonanni, 2004 .

Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells

D. As, K. Lischka, S. Li, 2007, cond-mat/0702100.

A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs

D. As, A. Beloufa, N. Kermas, 2020, Journal of Electronic Materials.

Growth of atomically smooth cubic AlN by molecular beam epitaxy

P. Schley, G. Rossbach, T. Schupp, 2010 .

Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

P. Schley, C. Cobet, N. Esser, 2009 .

MBE growth of cubic AlyGa1−yN/GaN heterostructures—structural, vibrational and optical properties

R. Goldhahn, D. As, K. Lischka, 2001 .

Optical Properties of MBE Grown Cubic AlGaN Epilayers and AlGaN/GaN Quantum Well Structures

D. Schikora, R. Goldhahn, D. As, 2000 .

Deep electron traps in GaAs/n‐AlxGa1−xAs single‐quantum wells

P. Mooney, P. Epperlein, D. As, 1988 .

The influence of the early stage of ZnSe growth on GaAs(001) on the defect-related luminescence

D. Schikora, D. As, K. Lischka, 1998 .

Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures

R. Brenn, C. Haug, D. As, 2001 .

Compositional analysis of molecular beam epitaxy grown InyGa1−yAs/GaAs/AlxGa1−xAs quantum wells by determination of film thickness

K. Köhler, D. As, M. Maier, 1993 .

Optical evidence of many-body effects in the zincblende Al x Ga 1−x N alloy system

M. Feneberg, R. Goldhahn, D. As, 2020, Journal of Physics D: Applied Physics.

Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures

D. As, T. Wecker, M. Godoy, 2018, Journal of Luminescence.

Optical characterization of cubic AlGaN/GaN quantum wells

L. Scolfaro, U. Köhler, D. As, 2002 .

Band offsets in cubic GaN/AlN superlattices

W. Schmidt, F. Julien, M. Tchernycheva, 2011 .

CW-Laser Annealing of CdTe Epitaxial Layers

J. Schuller, D. As, K. Lischka, 1984 .

Narrow spectral linewidth of single zinc-blende GaN/AlN self-assembled quantum dots

Y. Arakawa, S. Kako, S. Sergent, 2013 .

Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry

Y. Nanishi, H. Amano, I. Akasaki, 2003 .

Active zinc-blende III–nitride photonic structures on silicon

S. Iwamoto, Y. Arakawa, S. Kako, 2015 .

Excitonic complexes in single zinc-blende GaN/AlN quantum dots grown by droplet epitaxy

Y. Arakawa, S. Kako, S. Sergent, 2014 .

Single-photon emission from cubic GaN quantum dots

Y. Arakawa, M. Holmes, S. Kako, 2013 .

Optical phonon modes and interband transitions in cubic Al x Ga 1 − x N films

M. Schubert, C. M. Herzinger, A. Kasic, 2002 .

Topographical structure of MBE grown cubic InxGa1-xN films studied with a MeV ion microprobe and by AFM

S. Prawer, D. Jamieson, A. Cimmino, 2000 .

Optical excitation density dependence of spin dynamics in bulk cubic GaN

D. Hägele, J. Buss, T. Schupp, 2019, Journal of Applied Physics.

Pressure and temperature effects on optical transitions in cubic GaN

C. Thomsen, A. Goñi, K. Syassen, 1999 .

Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs

D. Schikora, D. As, K. Lischka, 1996 .

Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots

A. Wieck, H. Hofsäss, F. Semond, 2016 .

Mechanisms for the emission of visible light from GaAs field‐effect transistors

H. Zappe, D. As, 1990 .

Determination of acceptor binding energies in ZnSe

M. Pessa, K. Hingerl, H. Sitter, 1992 .

Cathodoluminescence spectroscopy of zinc-blende GaN quantum dots

T. Schupp, D. As, K. Lischka, 2012 .

Investigations on the Stranski–Krastanow growth of CdSe quantum dots

D. Gerthsen, M. Strassburg, D. Bimberg, 2000 .

Growth and characterization of ZnSe grown on GaAs by hot-wall epitaxy

K. Hingerl, H. Sitter, W. Rothemund, 1990 .

Cubic GaN quantum dots embedded in zinc-blende AlN microdisks

Cedrik Meier, Donat Josef As, Michael Burger, 2013 .

Lasing properties of non-polar GaN quantum dots in cubic aluminum nitride microdisk cavities

Dirk Reuter, A. Pawlis, Donat Josef As, 2013 .

Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots

Cedrik Meier, Donat Josef As, Michael Burger, 2013 .

Heteroepitaxy of Doped and Undoped Cubic Group III‐Nitrides

D. As, K. Lischka, 1999 .

Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si

B. Meyer, D. Schikora, D. As, 1999 .

P- and N-Type Doping of Mbe Grown Cubic GaN/GaAs Epilayers

B. Meyer, D. Schikora, D. As, 1998 .

Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures

Klaus Lischka, Donat Josef As, H. Vogelsang, 2001 .

MBE growth and applications of cubic AlN/GaN quantum wells

D. As, C. Mietze, 2013 .

Cubic GaN∕AlN multiple quantum well photodetector

Klaus Lischka, Jörg Schörmann, Donat Josef As, 2008 .

Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN

Christoph Cobet, Wolf Gero Schmidt, Donat Josef As, 2013 .

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

D. Reuter, D. As, Sarah Blumenthal, 2018 .

Stacked Self‐Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy

D. Reuter, D. Meertens, D. As, 2018 .

Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures

M. Betz, D. Reuter, E. Neumann, 2017 .

Fabrication and characterization of two‐dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots

A. Hildebrandt, J. Förstner, D. Reuter, 2016 .

Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice

M. Betz, D. Reuter, D. As, 2015 .

STEM‐CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi‐quantum wells

J. Lindner, P. Veit, J. Christen, 2015 .

Cubic GaN/AlN multi‐quantum wells grown on pre‐patterned 3C‐SiC/Si (001)

J. Pezoldt, J. Lindner, T. Stauden, 2014 .

Current–voltage characteristics of cubic Al(Ga)N/GaN double barrier structures on 3C–SiC

D. As, K. Lischka, C. Mietze, 2012 .

Anti-phase domains in cubic GaN

H. Maier, T. Niendorf, J. Lindner, 2011 .

Intrasubband transitions in cubic AlN/GaN superlattices for detectors from near to far infrared

M. O. Manasreh, D. As, K. Lischka, 2011 .

Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range

F. Julien, M. Tchernycheva, R. Colombelli, 2011 .

MBE growth of cubic AlN on 3C‐SiC substrate

C. Cobet, N. Esser, G. Rossbach, 2010 .

Inter- and intrasubband spectroscopy of cubic AlN/GaN superlattices grown by molecular beam epitaxy on 3C-SiC

M. O. Manasreh, D. As, K. Lischka, 2010 .

Near-infrared intersubband absorption in nonpolar cubic GaN/AlN superlattices

Klaus Lischka, Jörg Schörmann, Donat Josef As, 2007 .

Growth and characterization of cubic InxGa1−xN epilayers on two different types of substrate

F. Cerdeira, L. Scolfaro, D. As, 2005 .

Cubic InGaN/GaN multi-quantum wells and AlGaN/GaN distributed Bragg reflectors for application in resonant cavity LEDs

A. Pawlis, Shunfeng Li, J. Schörmann, 2005, Microelectron. J..

Incorporation and optical properties of magnesium in cubic GaN epilayers grown by molecular beam epitaxy

B. Meyer, D. Schikora, D. As, 1998 .

Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensation

K. Thonke, T. Meisch, M. Feneberg, 2011 .

Droplet epitaxy of zinc-blende GaN quantum dots

K. Thonke, T. Meisch, M. Feneberg, 2010 .

Magnetic and structural properties of Fe-implanted cubic GaN

J. Dias, E. Abramof, D. Schikora, 2016 .

Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C‐SiC

A. Zrenner, G. Berth, M. Rüsing, 2016 .

Cubic III‐nitride coupled quantum wells towards unipolar optically pumped lasers

F. Julien, M. Tchernycheva, S. Sakr, 2013 .

Cubic GaN on Nanopatterned 3C-SiC/Si (001) Substrates

J. Lindner, D. As, R. M. Kemper, 2013 .

Nonpolar cubic III-nitrides

D. As, K. Lischka, 2013 .

Europium doping of zincblende GaN by ion implantation

E. Alves, R. Martin, I. Roqan, 2009 .

Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates

Volker Cimalla, Klaus Lischka, Wolfgang Gebhardt, 2000 .

Cathodoluminescence of homogeneous cubic GaN/GaAs(001) layers

D. Schikora, D. As, K. Lischka, 1999 .

The near band edge photoluminescence of cubic GaN epilayers

D. Schikora, D. As, K. Lischka, 1997 .

Molecular beam epitaxy based growth of cubic GaN quantum dots

K. Thonke, T. Meisch, M. Feneberg, 2011 .

Mechanisms of optical gain in cubic gallium nitrite

Klaus Lischka, Donat Josef As, Detlef Schikora, 1998 .

MBE growth of cubic AlxIn1–xN and AlxGayIn1–x–yN lattice matched to GaN

J. Vogt, J. Gerlach, D. As, 2007, cond-mat/0702363.

Growth of cubic GaN on 3C–SiC/Si (001) nanostructures

H. Maier, T. Niendorf, J. Pezoldt, 2013 .

Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process

J. Lindner, D. Reuter, D. As, 2015 .

MBE growth of atomically smooth non-polar cubic AlN

T. Schupp, D. As, K. Lischka, 2010 .

Cubic group-III nitride-based nanostructures - basics and applications in optoelectronics

Donat Josef As, D. As, 2009, Microelectron. J..

Growth of cubic GaN quantum dots

K. Thonke, T. Meisch, M. Feneberg, 2010 .

Recent developments on non-polar cubic group III-nitrides for optoelectronic applications

D. As, 2010 .

Cathodoluminescence of MBE-grown cubic AlGaN/GaN multi-quantum wells on GaAs (001) substrates

Klaus Lischka, Donat Josef As, A. Khartchenko, 2002 .

Near infrared intersubband absorption in cubic GaN/AlN superlattices

D. As, K. Lischka, J. Schörmann, 2007 .

Cathodoluminescence analysis of cleaved facets of a ZnSe p–n junction

D. Schikora, D. As, K. Lischka, 2000 .

Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation

Masayuki Abe, Klaus Lischka, Hiroyuki Nagasawa, 2006, IEICE Trans. Electron..

p-Type Doping of Cubic GaN by Carbon

Klaus Lischka, Donat Josef As, U. Köhler, 2001 .

Carrier transport in HEMT's analyzed by high-field electroluminescence

H. Zappe, D. As, 1991, IEEE Electron Device Letters.

Laser‐beam heating and high‐temperature luminescence of CdTe

D. As, L. Palmetshofer, 1987 .

Properties of carbon as an acceptor in cubic GaN

U. Köhler, D. As, J. Mimkes, 2001 .

Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaN

F. Cerdeira, J. Soares, U. Köhler, 2003 .

High resolution carrier temperature and lifetime topography of semi-insulating GaAs using spatially and spectrally resolved photoluminescence

W. Jantz, D. As, Z. M. Wang, 1993 .

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

P. Schley, Frank Fuchs, Klaus Lischka, 2007 .

Growth of cubic InN on InAs(0 0 1) by plasma-assisted molecular beam epitaxy

A. P. Lima, S. Kaiser, D. Schikora, 1999 .

Dielectric function of cubic InN from the mid-infrared to the visible spectral range

P. Schley, Klaus Lischka, Jörg Schörmann, 2008 .

Molecular beam epitaxy of phase pure cubic InN

P. Schley, Klaus Lischka, Heinz Kalt, 2006 .

Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN : Si

R. Ahuja, I. Pepe, C. M. Araujo, 2002 .

Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems

R. Ahuja, I. Pepe, C. M. Araujo, 2001 .

Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

E. Abramof, D. Schikora, D. As, 1999 .

Intersubband transitions in partially interdiffused GaAs/AlGaAs multiple quantum‐well structures

Donat Josef As, M. Ramsteiner, M. Maier, 1991 .

Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Klaus Lischka, Friedhelm Bechstedt, Donat Josef As, 2002 .

Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations

F. Bechstedt, J. Furthmüller, W. Schaff, 2008 .

Germanium doping of cubic GaN grown by molecular beam epitaxy

H. Becker, D. Reuter, J. Gerlach, 2019, Journal of Applied Physics.

In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

K. Lischka, D. J. As, J. Schoermann, 2007, cond-mat/0702018.

n- and p-Type Doping of Cubic GaN

D. As, 2002 .

Raman scattering study of zincblende InxGa1-xN alloys

D. As, K. Lischka, J. Leite, 1999 .

Contactless electroreflectance study of Fermi-level pinning at the surface of cubic GaN

J. Misiewicz, R. Kudrawiec, D. As, 2010 .

Impact of Structural Properties on the Mechanisms of Optical Amplification in Cubic GaInN

F. Bertram, J. Christen, T. Riemann, 1999 .

Raman phonon modes of zinc blende InxGa1−xN alloy epitaxial layers

Klaus Lischka, Donat Josef As, A. P. Lima, 1999 .

Carbon as an acceptor in cubic GaN/3C-SiC

J. Gerlach, D. As, K. Lischka, 2011 .

Carbon doping of non-polar cubic GaN by CBr4

J. Gerlach, H. Karl, D. As, 2009 .

Lasing of donor-bound excitons in ZnSe microdisks

A. Pawlis, K. Lischka, K. Sanaka, 2007, 0712.1048.

D. As, 1998 .

Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures

J. Pezoldt, J. Lindner, T. Stauden, 2014 .

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures

J. Pezoldt, J. Lindner, T. Stauden, 2012 .

Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates

D. Schikora, F. Cerdeira, J. Soares, 2003 .

Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)

H. Maier, T. Niendorf, J. Lindner, 2012 .

Insulating substrates for cubic GaN-based HFETs

Klaus Lischka, Donat Josef As, E. Tschumak, 2009, Microelectron. J..

Electrical and Optical Properties of Mg Doped MBE Grown Cubic GaN Epilayers

D. As, 1998 .

Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates

J. Lindner, M. Weinl, T. Schupp, 2011 .

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1-xN.

K. Volz, P. Klar, Limei Chen, 2023, ACS applied materials & interfaces.

The origin of optical gain in cubic InGaN grown by molecular beam epitaxy

Klaus Lischka, Donat Josef As, Jürgen Christen, 2000 .

Growth of cubic InxGa1-xN over whole composition by MBE

F. Meier, D. As, J. Schörmann, 2023, OPTO.

Near ultraviolet emission from nonpolar cubic AlxGa1−xN∕GaN quantum wells

Klaus Lischka, Jörg Schörmann, Donat Josef As, 2006 .

Strain-induced ordering in InxGa1−xN alloys

Donat Josef As, Lara K. Teles, L. M. R. Scolfaro, 2003 .

Evidence of phase separation in cubic InxGa1−xN epitaxial layers by resonant Raman scattering

Klaus Lischka, Donat Josef As, T. Frey, 1999 .

Capacitance Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions

Fernando Ponce, Donat Josef As, A. Zado, 2013 .

Determination of Optical Constants for Cubic InxGa1—xN Layers

R. Goldhahn, U. Köhler, D. As, 1999 .

Electroluminescence of a cubic GaN/GaAs (001) p-n junction

D. As, K. Lischka, J. Mimkes, 2000 .

Band gap and effective electron mass of cubic InN

F. Bechstedt, P. Schley, K. Thonke, 2008 .

Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn+ ions

E. Abramof, D. Schikora, J. Coaquira, 2004 .

Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks

T. Riedl, D. Reuter, D. As, 2022, physica status solidi (b).

Spatially resolved optical emission of cubic GaN/AlN multi-quantum well structures

J. Lindner, P. Veit, F. Bertram, 2014 .

Capacitance Voltage Characteristics and Electron Holography on Cubic AlGaN/GaN Heterojunctions

F. Ponce, Ti Li, D. As, 2013 .

Growth and Characterization of a Cubic GaN p–n Light Emitting Diode on GaAs (001) Substrates

D. As, K. Lischka, J. Mimkes, 2000 .

Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function

J. Andreasson, M. Feneberg, R. Goldhahn, 2023, Journal of Applied Physics.

Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN II: Absorption edge shift with gain and temperature effects

J. Andreasson, M. Feneberg, R. Goldhahn, 2023, Journal of Applied Physics.

Mechanisms of Optical Gain in Cubic GaN and Ingan

A. Hoffmann, D. Schikora, D. As, 1998 .

P-Type Conductivity with a High Hole Mobility in Cubic GaN/GaAs Epilayers

D. Schikora, D. As, K. Lischka, 1996 .

Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate

A. P. Lima, D. Schikora, U. Köhler, 1999 .

Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions

Yoshihisa Yamamoto, Klaus Lischka, Thaddeus D. Ladd, 2009, Microelectron. J..

Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures

M. Cinchetti, T. Zentgraf, G. Springholz, 2021, Scientific Reports.

Luminescence spectroscopy of Eu‐implanted zincblende GaN

B. Hourahine, E. Alves, R. Martin, 2008 .

Strain dependent electron spin dynamics in bulk cubic GaN

D. Hägele, J. Buss, A. Schaefer, 2015 .

Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and AlxGa1−xN epitaxial layers

D. Schikora, D. As, K. Lischka, 2002 .

Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures

Mathias Schubert, Sven Einfeldt, Detlef Hommel, 2001, SPIE Optics + Photonics.

Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering

Leite, Schikora, D. Schikora, 2000, Physical review letters.