S. Khazanova

Numerical analysis of the spin-orbit coupling parameters in III-V quantum wells using 8-band Kane model and finite-difference method

V. Degtyarev, S. Khazanova, A. Konakov, 2021, 2103.16721.

Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum

N. V. Malekhonova, B. Zvonkov, V. Degtyarev, 2012 .

Purcell effect apparent in vertical transport in short-period superlattices

N. D. Il'inskaya, A. A. Usikova, R. Teissier, 2012, 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.

Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs

A. S. Puzanov, S. Khazanova, E. A. Tarasova, 2022, Semiconductors.

Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states

N. Demarina, V. Degtyarev, S. Khazanova, 2017, Scientific Reports.

Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures

Mikhail Vasilevskiy, M. Vasilevskiy, S. Khazanova, 2010 .

Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures

D. Filatov, A. P. Gorshkov, V. Degtyarev, 2015 .

Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

V. Degtyarev, S. Khazanova, N. V. Baidus, 2015 .

Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm

A. S. Puzanov, S. Khazanova, E. A. Tarasova, 2020 .

Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures

V. Degtyarev, S. Khazanova, A. Konakov, 2017 .

Determination of the electron concentration and mobility in the vicinity of a quantum well and δ-doped layer in InGaAs/GaAs heterostructures

S. Khazanova, N. V. Baidus, S. Tikhov, 2012 .