Bongsub Lee

发表

Thermal conductivity of phase-change material Ge2Sb2Te5

S. G. Bishop, Stephen G. Bishop, David G. Cahill, 2006 .

Observation and modeling of polycrystalline grain formation in Ge2Sb2Te5

Kumar Virwani, Alvaro Padilla, Robert M. Shelby, 2012 .

Characterization of high-purity Si-doped molecular beam epitaxial GaAs

James C. M. Hwang, G. Stillman, B. Skromme, 1984 .

Influence of the substrate orientation on Si incorporation in molecular‐beam epitaxial GaAs

Wei Wang, Munho Kim, G. E. Stillman, 1988 .

Surface kinetic aspects of Si incorporation in molecular beam epitaxial growth of GaAs

G. Stillman, N. Iwata, I. Sakuma, 1989 .

Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

G. Stillman, B. Skromme, Munho Kim, 1991 .

High‐purity epitaxial indium phosphide grown by the hydride technique

G. Stillman, Munho Kim, Bongsub Lee, 1988 .

Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor‐phase epitaxial gallium arsenide

G. Stillman, N. Tien, J. Aguilar, 1989 .

Neutron transmutation doping of high purity GaAs

G. Stillman, B. Skromme, T. Low, 1985 .

Spectroscopic studies of the influence of intentionally increased CO partial pressure on the incorporation of residual C impurities in molecular beam epitaxy GaAs

G. Stillman, A. Calawa, Munho Kim, 1988 .

Low-temperature processing of B 4CAl composites via infiltration technique

S. Kang, Bongsub Lee, 2001 .

Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots

Donghan Lee, J. S. Yim, P. Daniel Dapkus, 2001 .

Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy

S. G. Bishop, S. Raoux, Ki-Bum Kim, 2007 .

Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs

G. Stillman, P. Colter, Munho Kim, 1989 .

Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

Dae-Hwan Kang, S. G. Bishop, Stephen G. Bishop, 2005 .

KINETIC EFFECTS AND IMPURITY INCORPORATION IN MBE GROWTH OF GALLIUM ARSENIDE

G. Stillman, M. A. Plano, Bongsub Lee, 1990 .

High mobility two‐dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction

E. Mendez, G. Stillman, Wei Wang, 1986 .

Identification of residual donors in high‐purity epitaxial GaAs by magnetophotoluminescence

G. Stillman, Munho Kim, Bongsub Lee, 1987 .

Si donor neutralization in high-purity GaAs

J. S. Hughes, G. Stillman, Munho Kim, 1987 .

Optical and Electrical Properties of Phase Change Materials

S. G. Bishop, Stephen G. Bishop, Bongsub Lee, 2009 .

Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge2Sb2Te5 and AgInSbTe

Simone Raoux, Charles T. Retter, Robert M. Shelby, 2014 .

Quasi-equilibrium size distribution of subcritical nuclei in amorphous phase change AgIn-Sb2Te

S. G. Bishop, R. Shelby, S. Raoux, 2013 .

Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory

S. G. Bishop, S. Raoux, Y. Shih, 2014 .

Photo-oxidation and the absence of photodarkening in Ge 2Sb 2Te 5 phase change material

S. G. Bishop, S. Raoux, Ki-Bum Kim, 2006 .