F. Becker

发表

The practical and physical aspect of uranium isotope separation with lasers

K. Kompa, F. Becker, 1982 .

Process and film characterization of low pressure tetraethylorthosilicate–borophosphosilicate glass

F. Becker, H. Schäfer, D. Pawlik, 1986 .

Low‐pressure deposition of high‐quality SiO2 films by pyrolysis of tetraethylorthosilicate

A. Spitzer, F. Becker, D. Pawlik, 1987 .

Interlevel Dielectrics for Reduced Thermal Processing

F. S. Becker, F. Becker, 1989 .

Low pressure deposition of doped SiO2 by pyrolysis of tetraethylorthosilicate (TEOS). I: Boron and phosphorus doped films

F. Becker, S. Röhl, 1987 .

Low Pressure Deposition of Doped SiO2 by Pyrolysis of Tetraethylorthosilicate (TEOS). Part 1. Boron and Phosphorus Doped Films.

F. Becker, S. Roehl, 1988 .

Low Pressure Deposition of Doped SiO2 by Pyrolysis of Tetraethylorthosilicate (TEOS) II . Arsenic Doped Films

H. Treichel, F. Becker, S. Röhl, 1987 .

Low resistance polycrystalline silicon by boron or arsenic implantation and thermal crystallization of amorphously deposited films

H. Schaber, F. Becker, H. Oppolzer, 1984 .