D. Schwarz

发表

Engineering of Germanium Tunnel Junctions for Optical Applications

J. Schulze, R. Koerner, I. Fischer, 2018, IEEE Photonics Journal.

Advanced substrate and packaging concepts for compact system integration with additive manufacturing technologies for high temperature applications

Aarief Syed-Khaja, Daniel Schwarz, J. Franke, 2015, 2015 IEEE CPMT Symposium Japan (ICSJ).

Electroluminescence of $Si_{x}Ge_{1-x-y}Sn_{y}/Ge_{1-y}Sn_{y}$ pin-Diodes Grown on a GeSn Buffer

G. Capellini, M. Oehme, J. Schulze, 2022, ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC).

Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells

Michael R. S. Huang, G. Capellini, K. Busch, 2020 .

MBE grown germanium tunnel-junctions—burstein-moss effect and band-edge luminescence in the Ge Zener-Emitter

M. Oehme, J. Schulze, R. Koerner, 2017 .

Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy

Jörg Schulze, Michael Oehme, Daniel Schwarz, 2021, 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO).

Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy

A. Elsayed, J. Schulze, D. Schwarz, 2019, 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).

Plasmonic gratings from highly doped Ge1−y Sn y films on Si

M. Oehme, J. Schulze, S. Prucnal, 2021, Journal of Physics D: Applied Physics.

Inverse spin-Hall effect in GeSn

M. Oehme, J. Schulze, F. Ciccacci, 2021 .

Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting

M. Helm, R. Hübner, M. Oehme, 2022, Journal of physics. Condensed matter : an Institute of Physics journal.

SiGeSn material for integrated optical devices

Jörg Schulze, Michael Oehme, D. Schwarz, 2018, Photonics Europe.

Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress

J. Schulze, S. Sharma, Robin Khosla, 2021, IEEE Transactions on Nanotechnology.

Two-dimensional hole gases in SiGeSn alloys

M. Oehme, E. Kasper, D. Schwarz, 2022, Semiconductor Science and Technology.

Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy

M. Oehme, J. Schulze, D. Schwarz, 2020, Journal of Electronic Materials.

Fluidised glass façade elements for an active energy transmission control

S. Bertsch, D. Schwarz, D. Gstoehl, 2011 .

Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn

J. Schulze, M. Oehme, J. Schulze, 2020, Journal of physics. Condensed matter : an Institute of Physics journal.

Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn.

M. Oehme, J. Schulze, J. van Slageren, 2020, Journal of physics. Condensed matter : an Institute of Physics journal.

Tuning of Curie temperature in Mn5Ge3 films

M. Helm, Yujia Zeng, J. Schulze, 2022, Journal of Applied Physics.

Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics

Jörg Schulze, Inga A. Fischer, Michael Oehme, 2021, 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO).

High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications

J. Schulze, Robin Khosla, D. Schwarz, 2021 .

GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection

M. Oehme, J. Schulze, D. Schwarz, 2022, ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC).

Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy

H. S. Funk, S. Chiussi, D. Schwarz, 2019, 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).

A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification

S. Sharma, J. Schulze, Robin Khosla, 2022, IEEE Transactions on Electron Devices.

Process Optimizations for Ge-On-Si Depletion Mode Transistors Using Mesa Architecture

S. Sharma, J. Schulze, D. Schwarz, 2022, International Symposium on Semiconductor Manufacturing.

Impact of Charge Trapping and Constant Voltage Stress on Epitaxial p-Ge -on-p- Si and HfO 2 based Al/HfO 2 /p-Ge -on- p-Si/Al structures

J. Schulze, S. Sharma, Robin Khosla, 2021 .

Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si

J. Schulze, I. Fischer, D. Schwarz, 2022, Microelectron. J..

Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

K. Gonsalves, S. Sharma, J. Schulze, 2023, Journal of Vacuum Science & Technology B.

Thermal High Performance Storages for Use in Vehicle Applications

W. Kraft, T. Lanz, P. Vetter, 2018, Energy and Thermal Management, Air-Conditioning, and Waste Heat Utilization.

Determination of the indirect bandgap of lattice-matched SiGeSn on Ge

I. Costina, D. Schwarz, Michael Oehme, 2024, Materials Science in Semiconductor Processing.