Jifa Hao

BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs

Muhammad A. Alam, Amartya Ghosh, Jifa Hao, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Building-in reliability in BCD (Bipolar-CMOS-DMOS) technologies

T. E. Kopley, Jifa Hao, 2013, 2013 IEEE 10th International Conference on ASIC.

Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs

Osama O. Awadelkarim, Jifa Hao, Chris Kendrick, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

(Invited) Hot Carrier Reliability of High Voltage HVMOSFETs in BCD (Bipolar-CMOS-DMOS) Technology

Jifa Hao, 2017 .

High temperature bias-stress-induced instability in power trench-gated MOSFETs

Jifa Hao, Osama O. Awadelkarim, Samia A. Suliman, 2014, Microelectron. Reliab..

Hot carrier reliability in LDMOS devices

Jifa Hao, J. Hao, 2017, 2017 IEEE 12th International Conference on ASIC (ASICON).

High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors

Osama O. Awadelkarim, Jifa Hao, Mark Rioux, 2014 .

Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS

Amartya Ghosh, Jifa Hao, Yuhang Sun, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

An ultra dense trench-gated power MOSFET technology using a self-aligned process

Jifa Hao, R. Stokes, C. Kocon, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).