Wei Mao

发表

A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain

Y. Hao, Jincheng Zhang, Chong Wang, 2020 .

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2017 .

Energy relaxation of hot electrons in III-N bulk materials

Y. Hao, Y. Li, Jincheng Zhang, 2016 .

Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2020 .

Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Y. Hao, Xiao-hua Ma, Peijun Ma, 2020, AIP Advances.

Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT*

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2016 .

Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates*

Wei Mao, Yue Hao, Xue-Feng Zheng, 2016 .

Structural and optical investigation of nonpolar a-plane GaN grown by metal?organic chemical vapour deposition on r-plane sapphire by neutron irradiation

Y. Hao, Jincheng Zhang, Zhiyu Lin, 2012 .

Temperature effect on the submicron AlGaN/GaN Gunn diodes for terahertz frequency

Lin-An Yang, Y. Hao, Jincheng Zhang, 2011 .

Unidirectional p-GaN gate HEMT with composite source-drain field plates

Chunfu Zhang, Jincheng Zhang, Shenglei Zhao, 2022, Sci. China Inf. Sci..

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2021 .

490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics

Y. Hao, Xiao-hua Ma, Chong Wang, 2021 .

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress*

Y. Hao, Su Weiwei, Xiao-hua Ma, 2015 .

Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode

Lin-An Yang, Y. Hao, Wei Mao, 2013, IEEE Transactions on Electron Devices.

The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs

Y. Hao, Q. Feng, Jincheng Zhang, 2011 .

Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

Y. Hao, Q. Feng, Jincheng Zhang, 2008 .

Characteristics and threshold voltage model of GaN-based FinFET with recessed gate

Y. Hao, Y. Wang, Xiao-hua Ma, 2018, Chinese Physics B.

Study of GaN-based step-doping superjunction CAVET for further improvement of breakdown voltage and specific on-resistance

Jincheng Zhang, Yantao Zhang, Chong Wang, 2018 .

Improving the Performance of Deep Recessed Anode AlGaN/GaN Schottky Barrier Diode by Post Etching Treatment

Y. Hao, Xiao-hua Ma, Chong Wang, 2021, physica status solidi (a).

Effect of post anode annealing on W/Au and Ni/Au multi-channel AlGaN/GaN Schottky diode

Y. Hao, Xiao-hua Ma, Chong Wang, 2021, Superlattices and Microstructures.

An efficient model for trap analysis in C-V measurement for AlGaN/GaN heterostructure

Lin-An Yang, Y. Hao, Jincheng Zhang, 2012, 2012 12th International Workshop on Junction Technology.

Determination of polar C‐plane and nonpolar A‐plane AlN/GaN heterojunction band offsets by X‐ray photoelectron spectroscopy

Y. Hao, Qinsheng Zhu, Wei Mao, 2014 .

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

Y. Hao, Xiao-hua Ma, Shenglei Zhao, 2013 .

Improved crystal quality of nonpolar a-plane GaN based on the nano pattern formed by the annealed thin Ni layer

Y. Hao, Jincheng Zhang, Wei Mao, 2019, Superlattices and Microstructures.

Simulation Investigation of Laterally Downscaled N-Polar GaN HEMTs

Y. Hao, Jincheng Zhang, Xuefeng Zheng, 2019, IEEE Transactions on Electron Devices.

Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures

Y. Hao, Ju Wu, Qinsheng Zhu, 2012 .

InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2013 .

AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2012 .

Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2018 .

Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring

Yi Hao, Xuefeng Zheng, X. Ma, 2022, Applied Physics Letters.

Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects

Jie Liu, Y. Hao, Xiao-hua Ma, 2021, Semiconductor Science and Technology.

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Wei Mao, Yue Hao, Qian Feng, 2008, IEEE Electron Device Letters.

Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities

Y. Hao, Qinsheng Zhu, Wei Mao, 2012 .

Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications

Y. Hao, Jincheng Zhang, Chong Wang, 2018, Semiconductor Science and Technology.

Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions*

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2018 .

Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2021, Applied Physics Express.

Lateral AlGaN/GaN Schottky Barrier Diode With Arrayed p-GaN Islands Termination

Y. Hao, Xiaofei Wang, Chunfu Zhang, 2021, IEEE Transactions on Electron Devices.

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2021, IEEE Journal of the Electron Devices Society.

A novel AlGaN/GaN Schottky barrier diode with partial p-AlGaN cap layer and recessed dual-metal anode for high breakdown and low turn-on voltage

Y. Hao, Xiao-hua Ma, Chong Wang, 2019, Semiconductor Science and Technology.

GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructure

Y. Hao, Chong Wang, Xuefeng Zheng, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Influence of the Interface Acceptor-Like Traps on the Transient Response of AlGaN/GaN HEMTs

Wei Zhang, Wei Mao, Yue Hao, 2013, IEEE Electron Device Letters.

Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, J. Mo, 2020, Semiconductor Science and Technology.

Simulations of the terahertz AlGaN/GaN resonant tunneling diode

Lin-An Yang, Hanbing He, Wei Mao, 2012, 2012 12th International Workshop on Junction Technology.

Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode

Lin-An Yang, Y. Hao, Hanbing He, 2011 .

Patterned sapphire substrates cause a wavelength shift of green InGaN light-emitting diodes

Y. Hao, Jincheng Zhang, Wei Mao, 2020 .

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate*

Wei Mao, Xiaohua Ma, Yue Hao, 2016 .

Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition

Lin-An Yang, Y. Hao, Jincheng Zhang, 2010 .

Gamma-Irradiation-Accelerated Degradation in AlGaN-Based UVC LEDs Under Electrical Stress

Y. Hao, Xiao-hua Ma, Chong Wang, 2021, IEEE Transactions on Nuclear Science.

Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Xiao-hua Ma, Xuefeng Zheng, Wei Mao, 2023, Applied Physics Letters.

Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

Yunlong He, Wei Mao, Xiaohua Ma, 2017 .