Haiyong Wang

发表

A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain

Y. Hao, Jincheng Zhang, Chong Wang, 2020 .

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2017 .

Unidirectional p-GaN gate HEMT with composite source-drain field plates

Chunfu Zhang, Jincheng Zhang, Shenglei Zhao, 2022, Sci. China Inf. Sci..

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2021 .

Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current

Y. Hao, Jincheng Zhang, Hong Zhou, 2020 .

High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Semiconductor Science and Technology.

Study of GaN-based step-doping superjunction CAVET for further improvement of breakdown voltage and specific on-resistance

Jincheng Zhang, Yantao Zhang, Chong Wang, 2018 .

High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2019, Applied Physics Letters.

Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications

Y. Hao, Jincheng Zhang, Chong Wang, 2018, Semiconductor Science and Technology.

Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions*

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2018 .

Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures

Y. Hao, Jincheng Zhang, Jing Ning, 2021 .

Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2021, Applied Physics Express.

Lateral AlGaN/GaN Schottky Barrier Diode With Arrayed p-GaN Islands Termination

Y. Hao, Xiaofei Wang, Chunfu Zhang, 2021, IEEE Transactions on Electron Devices.

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2021, IEEE Journal of the Electron Devices Society.

Investigation on the interface trap characteristics in a p-channel GaN MOSFET through temperature-dependent subthreshold slope analysis

Y. Hao, Jincheng Zhang, Jing Ning, 2021, Journal of Physics D: Applied Physics.

A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, Applied Physics Express.