Xiaoling Duan

发表

High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

Y. Hao, Jincheng Zhang, Zhiyu Lin, 2019, Micromachines.

Effect of graded InGaN drain region and ’In’ fraction in InGaN channel on performances of InGaN tunnel field-effect transistor

Y. Hao, Shulong Wang, Jincheng Zhang, 2017 .

Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV

Jincheng Zhang, Yue Hao, Xiaoling Duan, 2022, Applied Physics Letters.

Electronic Transport Properties in AlInGaN/AlGaN Heterostructures

Y. Li, Jincheng Zhang, Yue Hao, 2018 .

Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

Y. Hao, Xiao-hua Ma, Chong Wang, 2017 .

Comparison the electron momentum and energy relaxation process in wurtzite GaN, InN and AlN by Monte Carlo method

Hongxia Liu, Shulong Wang, Chao Han, 2019, Solid State Communications.

Comprehensive Annealing Effects on AlGaN/GaN Schottky Barrier Diodes With Different Work-Function Metals

Y. Hao, Jincheng Zhang, Jing Ning, 2021, IEEE Transactions on Electron Devices.

A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Y. Hao, Tangsheng Chen, Jincheng Zhang, 2019, IEEE Electron Device Letters.

High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Semiconductor Science and Technology.

The accelerated design of the nanoantenna arrays by deep learning

Xiaoling Duan, Lanxin Ma, Yuhang Li, 2022, Nanotechnology.

Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN

Y. Hao, Jincheng Zhang, Jing Ning, 2021 .

GaN microrod sidewall epitaxial lateral overgrowth on a close-packed microrod template

Jincheng Zhang, Xiaoling Duan, Jinfeng Zhang, 2018 .

A partly-contacted epitaxial lateral overgrowth method applied to GaN material

Y. Hao, Jincheng Zhang, Jing Ning, 2016, Scientific Reports.

GaN JBS Diode Device Performance Prediction Method Based on Neural Network

Jincheng Zhang, Yue Hao, Xiaoling Duan, 2023, Micromachines.

Study on the effects of growth rate on GaN films properties grown by plasma-assisted molecular beam epitaxy

Y. Hao, Xiao-hua Ma, Mei Yang, 2020 .

A High-Performance Gate Engineered InGaN Dopingless Tunnel FET

Y. Hao, Shulong Wang, Jincheng Zhang, 2018, IEEE Transactions on Electron Devices.

Strong selective oxidization on two-dimensional GaN: a first principles study.

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Physical chemistry chemical physics : PCCP.

Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures

Y. Hao, Jincheng Zhang, Jing Ning, 2021 .

Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage

Y. Hao, Jincheng Zhang, Jing Ning, 2019, Applied Physics Express.

1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination

Y. Hao, Jincheng Zhang, Jing Ning, 2020, IEEE Electron Device Letters.

Prediction of electrical properties of FDSOI devices based on deep learning

Hongxia Liu, Shulong Wang, Shupeng Chen, 2022, Nanotechnology.

Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures*

Y. Hao, Jincheng Zhang, Jing Ning, 2016 .

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

Y. Hao, Tangsheng Chen, Jincheng Zhang, 2019, Applied Physics Express.

A 0.43 V/90 nA/mm Lateral AlGaN/GaN Schottky Barrier Diode With Plasma-Free Groove Anode Technique

Y. Hao, Jincheng Zhang, Xiaoling Duan, 2021, IEEE Electron Device Letters.

High Performance Al0.10Ga0.90N Channel HEMTs

Y. Hao, Jincheng Zhang, Jing Ning, 2018, IEEE Electron Device Letters.

More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2019, IEEE Electron Device Letters.

Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode

Y. Hao, Jincheng Zhang, Jing Ning, 2020 .

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

Tao Zhang, Hong Zhou, Yachao Zhang, 2020, IEEE Transactions on Industrial Electronics.

Investigation on the interface trap characteristics in a p-channel GaN MOSFET through temperature-dependent subthreshold slope analysis

Y. Hao, Jincheng Zhang, Jing Ning, 2021, Journal of Physics D: Applied Physics.

Optimization of Dual Field Plate AlGaN/GaN HEMTs Using Artificial Neural Networks and Particle Swarm Optimization Algorithm

Jincheng Zhang, Yue Hao, Xiaoling Duan, 2023, IEEE Transactions on Device and Materials Reliability.

Optimization and Performance Prediction of Tunnel Field‐Effect Transistors Based on Deep Learning

G. Wang, Hongxia Liu, Shulong Wang, 2021, Advanced Materials Technologies.

A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021, Applied Physics Express.