Rudai Quan

Effect of graded InGaN drain region and ’In’ fraction in InGaN channel on performances of InGaN tunnel field-effect transistor

Y. Hao, Shulong Wang, Jincheng Zhang, 2017 .

Electronic Transport Properties in AlInGaN/AlGaN Heterostructures

Y. Li, Jincheng Zhang, Yue Hao, 2018 .

Polycrystalline diamond RF MOSFET with MoO3 gate dielectric

Y. Hao, Chunfu Zhang, Jincheng Zhang, 2017 .

Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier

Y. Hao, Jincheng Zhang, Jing Ning, 2016 .

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Y. Hao, Jincheng Zhang, Rudai Quan, 2016 .