S. Ganguly

发表

Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Patrick Fay, Debdeep Jena, Yu Cao, 2010 .

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

Yu Cao, A. Verma, Ronghua Wang, 2013, IEEE Electron Device Letters.

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

D. Jena, H. Xing, Pei Zhao, 2016, 1611.08914.

Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs

D. Jena, H. Xing, Zongyang Hu, 2014 .

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Debdeep Jena, Huili Xing, Satyaki Ganguly, 2011 .

Erratum: “Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions” [Appl. Phys. Lett. 99, 193504 (2011)]

D. Jena, H. Xing, T. Zimmermann, 2011 .

Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts

D. Jena, H. Xing, J. Verma, 2014 .

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

S. Ryu, B. Hull, J. Palmour, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

D. Jena, H. Xing, V. Protasenko, 2015, 1502.00072.

Accelerated Testing of SiC Power Devices under High-Field Operating Conditions

S. Ryu, B. Hull, J. Richmond, 2020 .

Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation

Huili Grace Xing, Ronghua Wang, O. Laboutin, 2013, 2013 IEEE International Electron Devices Meeting.

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

D. Jena, H. Xing, V. Protasenko, 2014 .

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

Zongyang Hu, Debdeep Jena, Huili Xing, 2012 .

AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz

D. Jena, H. Xing, W. Hwang, 2014 .

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations

J. McPherson, E. Brunt, D. Lichtenwalner, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies

Simon Wood, Donald A. Gajewski, Jeff B. Barner, 2018, Microelectron. Reliab..

Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design

S. Sheppard, D. Gajewski, O. Tornblad, 2022, IEEE Electron Device Letters.

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

B. Hull, J. Palmour, E. van Brunt, 2019, Materials Science Forum.

Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs

D. Jena, H. Xing, T. Zimmermann, 2011, 69th Device Research Conference.

Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment

Zongyang Hu, Debdeep Jena, Huili Xing, 2014 .

Tunneling in III-V Nitrides

J. Verma, K. Karda, S. Ganguly, 2009 .