B. McSkimming

发表

Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures

V. Chobpattana, S. Stemmer, Junwoo Son, 2012 .

Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting

K. Sakoda, K. Mitsuishi, T. Mano, 2010 .

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

peixiong zhao, E. Zhang, D. Fleetwood, 2015 .

Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces

S. Ringel, J. Speck, T. Grassman, 2017 .

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

V. Chobpattana, S. Stemmer, Junwoo Son, 2015 .

Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h

J. Speck, Feng Wu, B. McSkimming, 2014 .

Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

S. Ringel, J. Speck, T. Grassman, 2018, Journal of Applied Physics.

Exploring Threshold Concepts for Intermediate Students

Adrienne Decker, B. McSkimming, 2022, SIGCSE.

Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy

J. Speck, H. Okumura, B. McSkimming, 2014 .

High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

J. Speck, B. McSkimming, C. Chaix, 2015 .

Correlation of a generation-recombination center with a deep level trap in GaN

E. Fitzgerald, S. Chua, S. Ringel, 2015 .

Impact of proton irradiation on deep level states in n-GaN

En Xia Zhang, Steven A. Ringel, James S. Speck, 2013 .

High Active Nitrogen Flux Growth of (Indium) Gallium Nitride by Plasma Assisted Molecular Beam Epitaxy

B. McSkimming, 2015 .

Metamorphic growth of relaxed single crystalline aluminum on silicon (111)

B. Arey, I. Arslan, C. Richardson, 2017 .

Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

S. Ringel, J. Speck, A. Arehart, 2014, Journal of Electronic Materials.

Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Steven A. Ringel, James S. Speck, Aaron R. Arehart, 2013 .

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

O. Bierwagen, U. Mishra, J. Speck, 2010 .

Of Microscopes and Meeting Places: A Literature Review Examining Barriers to Indigenous Participation in STEM

B. McSkimming, Madeline Bollinger, 2024, Education Sciences.