C. Beling

发表

A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes

S. Fung, Tsz-cheung Lee, C. Beling, 1992 .

Monte carlo simulation of positron induced secondary electrons in thin carbon foils

B. Yang, C. Ling, S. Fung, 2011 .

Large lattice relaxation deep levels in neutron-irradiated GaN

C. Sarkar, Rongxin Wang, S. Li, 2005 .

Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

Minglun Gong, C. Ling, C. Beling, 2004 .

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Chengdu, Beijing, Chinese Academy of Sciences, 2002, cond-mat/0201294.

Vacuum Re-Emission of Positrons from a-SiO2 Layers

M. Charlton, C. Beling, R. I. Simpson, 1988 .

Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy

Kevin J. Chen, Maojun Wang, C. Beling, 2010 .

Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Kevin J. Chen, Maojun Wang, C. Cheng, 2009 .

GALLIUM IMPLANTATION INDUCED DEEP LEVELS IN N-TYPE 6H-SIC

W. Skorupa, G. Brauer, C. Beling, 1998 .

Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOCVD

Hu Yi-Fan, S. Fung, C. Beling, 2005 .

Experimental study and modeling of the influence of screw dislocations on the performance of Au'n-GaN Schottky diodes

C. Ling, C. Beling, Y. Huang, 2003 .

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

B. Yang, C. Ling, C. To, 2011 .

Positron annihilation spectroscopic study of hydrothermal grown n‐type zinc oxide single crystal

W. Skorupa, G. Brauer, W. Anwand, 2007 .

The transformations of the EL6 deep level defect in n-GaAs: Is EL6 a DX-like center?

S. Fung, C. Beling, C. Reddy, 1998 .

Title Photoinduced Dehydrogenation of Defects in Undoped a-Si : HUsing Positron Annihilation Spectroscopy

Y. Chan, Y. Lam, C. Beling, 2000 .

Rapid Thermal Annealing Induced Deep Level Defects in Te‐Doped GaAs

S. Fung, C. Beling, S. Fung, 1998 .

Beryllium implantation induced deep level defects in p-type 6H–silicon carbide

H. Tanoue, C. Ling, C. Beling, 2003 .

Identification of charge states of indium vacancies in InP using the positron-electron auto-correlation function

A. Seitsonen, M. Fuchs, S. Fung, 1998 .

Identification of Vacancy-Like Defects in High-Rate Grown a-Si Before and After Light Soaking by Vepas

Y. Lam, S. Lin, Y. Chan, 1998 .

The enhancement of positronium yields by the hydroxide ion in the radiolysis of water

F. A. Smith, C. Beling, 1984 .

Temperature dependence of positron lifetimes in water and ethanol

F. A. Smith, C. Beling, 1981 .

Possible improvements in the bubble model description of positronium pick-off annihilation in liquids

F. A. Smith, C. Beling, 1980 .

Spatial characterization of a 2 in GaN wafer by Raman spectroscopy and capacitance–voltage measurements

C. Ling, C. Beling, Y. Huang, 2004 .

Depth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadening

Y. Lam, Y. Chan, Y. Lam, 1998 .

STUDY OF DX CENTER IN CD0.8ZN0.2TE:CL BY POSITRON ANNIHILATION

K. Lynn, C. Ling, C. Beling, 1998 .

Stark shift and field induced tunneling in doped quantum wells with arbitrary potential profiles

B. K. Panda, S. Panda, C. Beling, 1996 .

Field Assisted Moderators

M. Charlton, C. Beling, R. I. Simpson, 1987 .

Coincidence doppler broadening study in electron-irradiated polyurethane

C. Beling, J. Zhang, D. J. Yang, 2007 .

Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces

C. Ling, C. Beling, S. Fung, 2002 .

Design and implementation of a real-time positron imager

Christopher D. Beling, Pranab S. Naik, Stevenson Fung, 2004, IS&T/SPIE Electronic Imaging.

Low-energy positron beams-origins, developments and applications

M. Charlton, C. Beling, 1987 .

Deconvolution of 2D coincident Doppler broadening spectroscopy using the Richardson–Lucy algorithm

Michael K. Ng, C. D. Beling, M. Ng, 2006 .

The inhibition of positronium by the chloride ion in water and the positron: Chloride reaction

F. A. Smith, C. Beling, 1983 .

Deep level traps in the extended tail region of boron-implanted n-type 6H–SiC

W. Skorupa, G. Brauer, C. Beling, 1998 .

Electric field effect on the diffusion modified AlGaAs/GaAs single quantum well

B. K. Panda, Sudhira Panda, C. D. Beling, 1996 .

Quantum confined stark effect and optical absorption in AlxGa1−xAs/GaAs/AlxGa1−xAs

B. K. Panda, S. Panda, C. Beling, 1996 .

The production of collimated beams of o-Ps atoms using charge exchange in positron-gas collisions

M. Charlton, C. Beling, G. Laricchia, 1987 .

Tungsten mesh as positron transmission moderator in a monoenergetic positron beam

C. Cheung, C. Ling, C. Beling, 2004 .

On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy

Ari P. Seitsonen, B. K. Panda, C. D. Beling, 1998 .

Positron-electron autocorrelation function study of E-center in silicon

M. Biasini, G. Ferro, S. Fung, 2003 .

Calculation of the momentum distributions of positron annihilation radiation in Ge

B. K. Panda, S. Fung, C. Beling, 1997 .

Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC

W. Skorupa, G. Brauer, Shijie Xu, 2006 .

Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide

C. Lam, C. Ling, C. Beling, 2004 .

Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC

C. Ling, C. Beling, S. Fung, 2003 .

Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy

C. Lam, C. Ling, C. Beling, 2003 .

Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy

C. Ling, S. Fung, C. Beling, 2000 .

Electron-irradiation-induced deep levels in n-type 6H-SiC

C. Beling, S. Fung, M. Gong, 1999 .

Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide

C. Ling, S. Fung, C. Beling, 2000 .

A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC

Minglun Gong, C. Beling, S. Fung, 1999 .

Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide

W. Skorupa, G. Brauer, W. Anwand, 2005 .

Deep Level Defects in He-implanted n-6H-SiC Studied by Deep Level Transient Spectroscopy

W. Skorupa, G. Brauer, W. Anwand, 2004 .

A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC

H. Tanoue, C. Beling, N. Kobayashi, 2000 .

A simple and inexpensive circuit for emission and capture deep level transient spectroscopy

S. Fung, C. Beling, C. Reddy, 1996 .

Low energy electron irradiation induced deep level defects in 6H-SiC: the implication for the microstructure of the deep levels E1/E2.

C. Ling, C. Beling, C. Yang, 2004, Physical review letters.

Photoluminescence characterization of beryllium-implanted 6H-silicon carbide

Q. Li, H. Tanoue, Shijie Xu, 2002 .

Photoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbide

Q. Li, H. Tanoue, Shijie Xu, 2001 .

Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

Minglun Gong, C. Ling, C. Beling, 2004 .

Defect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy

C. Ling, C. Beling, S. Fung, 2001 .

Silicon and carbon vacancies in silicon carbide studied by coincidence Doppler broadening spectroscopy

C. Ling, C. Beling, S. Fung, 2007 .

Photoinduced dehydrogenation of defects in undoped a-si:H using positron annihilation spectroscopy.

Y. Chan, Y. Lam, C. Beling, 2000, Physical review letters.

Deep level defect in Si-implanted GaN n+-p junction

M. L. Lee, S. Chang, J. Sheu, 2003 .

Density dependence of positron annihilation and positronium formation in H2 gas at temperatures between 77 and 297 K

M. Charlton, C. Beling, G. Laricchia, 1987 .

Positron annihilation studies of high dose Sb implanted silicon

Y. Takamura, S. Eijt, H. Schut, 2005 .

A real-time S-parameter imaging system

C. D. Beling, P. S. Naik, P. S. Naik, 2005 .

Current transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition

P. Chu, Y. Mei, G. Siu, 2006 .

Measurement of positron mobility in silicon

M. Charlton, C. Beling, R. I. Simpson, 1989 .

Aluminum and electron-irradiation induced deep-levels in n-type and p-type 6H-SiC

W. Skorupa, G. Brauer, C. Beling, 1998 .

Inexpensive circuit for the measurement of capture cross section of deep level defects in semiconductors

S. Fung, C. Beling, C. Reddy, 1996 .

The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire

S. Xu, C. Ling, S. Fung, 2004 .

A study of the electric field transient at the Au/semi-insulating GaAs contact under an alternating current square-pulse bias

C. Ling, C. Beling, S. Fung, 2002 .

GALLIUM IMPLANTATION INDUCED DEEP LEVELS IN N-TYPE 6H-SIC

W. Skorupa, G. Brauer, C. Beling, 1998 .

Beryllium implantation induced deep levels in 6H-silicon carbide

H. Tanoue, C. Beling, N. Kobayashi, 2001 .