S. Dhariwal

发表

Electron-hole recombination via a simplified cascade process

P. Landsberg, S. Dhariwal, 1989 .

Saturation of photovoltage and photocurrent in p-n junction solar cells

L. S. Kothari, S. Dhariwal, S.C. Jain, 1976, IEEE Transactions on Electron Devices.

Ramp recovery in p-i-n diodes : general mathematical formulation and comparison with other methods of lifetime measurement

S. Dhariwal, R. Sharma, 1992 .

Analytical expressions for the response of flat-plate collector to various transient conditions

S. R. Dhariwal, U. S. Mirdha, S. Dhariwal, 2005 .

Non‐uniformities in ultra‐thin oxide layers and their effect on the properties of tunnel MOS, MOM, and SOS devices

P. Bhatnagar, S. Dhariwal, G. Srivastava, 1981 .

Analytical expressions for asymmetric double quantum wells and their application to semiconductor heterostructures

S. Dhariwal, J. Ram, 2006 .

Current-voltage relation in silicon p-n junctions

G. P. Srivastava, S. Dhariwal, 1977 .

Thermal non-uniformities in concentrator solar cells

S. R. Dhariwal, R. K. Mathur, D. R. Mehrotra, 1984 .

Voltage reduction in a non-uniformly illuminated solar cell

S. Dhariwal, R. Mathur, R. Gadre, 1981 .

The physics of p-n junction solar cells operated under concentrated sunlight

D. R. Mehrotra, S. Dhariwal, R. Mathur, 1983 .

On the sensitivity of open-circuit voltage and fill factor on dangling bond density and Fermi level position in amorphous silicon p–i–n solar cell

S. Dhariwal, Manu Smirty, 2006 .

Contribution of bulk states to the depletion layer admittance

S. Dhariwal, B. M. Deoraj, 1993 .

AlSi peaked Schottky barriers

V. N. Ojha, G. P. Srivastava, P. Bhatnagar, 1982 .

Measurement of lifetime of photoinjected carriers in solar cells by reverse voltage pulse response

S. Dhariwal, 1980 .

Kinetics of light induced metastable defect creation in amorphous silicon : a dispersive excitonic model for the weak bond-dangling bond conversion

S. Dhariwal, B. M. Deoraj, 1992 .

A theoretical study of field-enhanced emission (Poole-Frenkel effect)

P. Landsberg, S. Dhariwal, 1989 .

Theory of amorphous silicon solar cell (a): numerical analysis

S. Rajvanshi, S. Dhariwal, 2003 .

On the recombination of electrons and holes at traps with finite relaxation time

L. S. Kothari, S. Jain, S. Dhariwal, 1981 .

Determination of carrier lifetime in p-i-n diodes by ramp recovery

S. Dhariwal, R. Sharma, 1992, IEEE Electron Device Letters.

Photocurrent and photovoltage from polycrystalline p-n junction solar cells

D. R. Mehrotra, S. Dhariwal, 1988 .

Statistics of electrons and holes in heavily doped n-silicon

V. N. Ojha, G. P. Srivastava, S. Dhariwal, 1987, IEEE Transactions on Electron Devices.

Generation and recombination lifetime measurement in silicon wafers using impedance spectroscopy

Sanjai Kumar, P. K. Singh, G. S. Chilana, 2009 .

On the possibility of designing interacting semiconductor quantum wells with zero perturbation coupling

S. Dhariwal, J. Ram, 2007 .

Effect of surface passivation on generation and recombination lifetimes in silicon wafer studied by impedance spectroscopy

Sanjai Kumar, S. Dhariwal, P. Singh, 2010 .

Open-circuit to short-circuit switching: method for lifetime measurement in solar cells

S. Dhariwal, R. Gadre, Niranjan Basu, 1979 .

Theory of transient photovoltaic effects used for measurement of lifetime of carriers in solar cells

L. S. Kothari, S. Jain, S. Dhariwal, 1977 .

Effect of trap size on diffusion limited life-time in semiconductors

D. R. Mehrotra, S. Dhariwal, 1988 .

Theory of dispersive relaxation in amorphous semiconductors

S. Dhariwal, B. M. Deoraj, 1991 .

Theory of amorphous silicon solar cell (b): a five layer analytical model

S. Rajvanshi, S. Dhariwal, 2003 .

Theory of metal-oxide-semiconductor solar cells

S. R. Dhariwal, G. P. Srivastava, P. Bhatnagar, 1979 .

Modified drift field model for high-low transition in solar cells

S. Dhariwal, R. Gadre, A. Kulshreshtha, 1983 .

Theory of back surface field silicon solar cells

S. Dhariwal, A. Kulshreshtha, 1981 .

Transients in p-n-junction solar cells

L. S. Kothari, S. Jain, S. Dhariwal, 1976 .

Voltage saturation at the high-low junction and its effect on the I-V characteristics of a diode

R. C. Sharma, V. N. Ojha, S. R. Dhariwal, 1988 .

Modified differential open-circuit-voltage decay method for lifetime measurement in p-n junctions

S. Dhariwal, R. Sharma, 1993 .

Surface recombination and internal currents in a vertical-junction solar cell

L. S. Kothari, S. Jain, S. Dhariwal, 1975 .

A generalised approach to lifetime measurement in pn junction solar cells

S. R. Dhariwal, N. K. Vasu, S. Dhariwal, 1981 .

Mathematical formulation for the photo-induced open circuit voltage decay method for measurement of minority carrier lifetime in solar cells

S. Dhariwal, N. K. Vasu, 1981, IEEE Electron Device Letters.

Study on the transient properties of amorphous solar cells

S. Dhariwal, Manu Smrity, 2016 .

RESPONSE OF p-n JUNCTION SOLAR CELLS TO CONCENTRATED SUNLIGHT AND PARTIAL ILLUMINATION

L. S. Kothari, S. Jain, S. Dhariwal, 1978 .

Equivalent circuits for transients in p-n junctions and solar cells with their application to methods for minority carrier life-time measurements

S. R. Dhariwal, R. Gadre, S. Dhariwal, 1984 .

Design optimization of solar cooker

U. S. Mirdha, S. R. Dhariwal, S. Dhariwal, 2008 .

On the recombination and diffusion limited surface recombination velocities

D. R. Mehrotra, S. Dhariwal, 1988 .

Theory of surface photovoltage in semiconductor films

S. Dhariwal, B. M. Deoraj, 1993 .

Physics of BSF solar cells at high levels of illumination

S. Dhariwal, R. Mathur, R. Gadre, 1983, IEEE Electron Device Letters.

Suppression of nonradiative recombination in small size semiconductors

S. Dhariwal, J. Ram, 2005 .

Band gap narrowing in heavily doped silicon

V. N. Ojha, S. Dhariwal, 1982 .

On the shifting and broadening of impurity bands and their contribution to the effective electrical bandgap narrowing in moderately doped semiconductors

V. N. Ojha, G. P. Srivastava, S. Dhariwal, 1985, IEEE Transactions on Electron Devices.

Some simple observations on the bandgap narrowing in heavily doped silicon

V. N. Ojha, S. Dhariwal, 1985 .