I. Takemoto

Vertical smear noise model for MOS-type color imager

K. Takahashi, T. Fujita, M. Nakai, 1985, IEEE Transactions on Electron Devices.

Si substrate structure for solid-state color imagers

M. Nakai, I. Takemoto, K. Watanabe, 1985, IEEE Transactions on Electron Devices.

The Energy Levels of Te127

I. Takemoto, T. Iwashita, S. Kageyama, 1967 .

MOS area sensor: Part I—Design consideration and performance of an n-p-n structure 484 × 384 element color MOS imager

N. Koike, I. Takemoto, K. Satoh, 1980, IEEE Transactions on Electron Devices.

2/3-inch format MOS single-chip color imager

I. Takemoto, S. Nagahara, M. Kubo, 1982, IEEE Transactions on Electron Devices.

An NPN structure 484×384 MOS imager for a single-chip color camera

M. Kubo, M. Ashikawa, N. Koike, 1979, 1979 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

A wide-band low-noise charge transfer video delay line

Iwao Takemoto, Masaharu Kubo, S. Ohba, 1974 .

A wideband low-noise analog delay line

Iwao Takemoto, Masaharu Kubo, M. Ashikawa, 1974 .

A charge transfer device with self-aligned electrodes

S. Ohba, M. Kubo, I. Takemoto, 1973 .