A. Blicher

发表

Physics of semiconductor power devices

A. Blicher, A Blicher, 1982 .

CHAPTER 6 – POWER TRANSISTOR STRUCTURES. BIPOLAR TRANSISTOR MODELS

A. Blicher, 1981 .

CHAPTER 7 – CURRENT GAIN AT HIGH CARRIER CONCENTRATIONS

A. Blicher, 1981 .

CHAPTER 1 – SEMICONDUCTOR SURFACE THEORY CONCEPTS

A. Blicher, 1981 .

CHAPTER 4 – AVALANCHE BREAKDOWN IMPROVEMENT METHODS

A. Blicher, 1981 .

CHAPTER 13 – MOS POWER TRANSISTOR STRUCTURES AND DESIGN CONSIDERATIONS

A. Blicher, 1981 .

Thyristor voltage drop in the on-state

A. Blicher, 1976 .

CHAPTER 10 – TRANSISTOR THERMAL PROPERTIES. INSTABILITIES

A. Blicher, 1981 .

Breakdown Voltage of Graded Gallium Arsenide p‐n Junctions

H. Kressel, A. Blicher, 1963 .

Thyristor thermal response

A. Blicher, 1976 .

CHAPTER 2 – SEMICONDUCTOR PROPERTIES AT HIGH CARRIER CONCENTRATIONS

A. Blicher, 1981 .

Avalanche breakdown enhancement by mesa contouring

A. Blicher, 1976 .

CHAPTER 12 – INSULATED GATE FIELD-EFFECT TRANSISTORS

A. Blicher, 1981 .

CHAPTER 11 – JUNCTION FIELD-EFFECT TRANSISTORS (JFETs)

A. Blicher, 1981 .

Thyristor di/dt and current pulse capability

A. Blicher, 1976 .