A. Kurobe

发表

Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

Shinichi Takagi, Naoharu Sugiyama, Tomohisa Mizuno, 2001 .

Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

N. Sugiyama, S. Takagi, A. Toriumi, 2000, IEEE Electron Device Letters.

LETTER TO THE EDITOR: Mobility modulation of two-dimensional hole gas in a p-type Si/SiGe modulation doped heterostructure by back-gating

N. Sugiyama, T. Tezuka, T. Hatakeyama, 1998 .

Structure and Characteristics of Strained-Si-On-Insulator (Strained-SOI) MOSFETs

N. Sugiyama, S. Takagi, T. Mizuno, 2001 .

Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system

N. Shimomura, H. Yoda, K. Ikegami, 2018 .

Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers

N. Sugiyama, H. Furuyama, S. Naritsuka, 1988 .

The physics and fabrication of in situ back-gated (311)A hole gas heterojunctions

D. Ritchie, M. Pepper, M. Simmons, 1997 .

Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology

N. Sugiyama, S. Takagi, T. Mizuno, 2000 .

Effects of residual doping on the quantum confined Stark effect in p-i-n multiple quantum well structures

H. Yoshida, T. Tezuka, Y. Ashizawa, 1992 .

The effect of conduction band non-parabolicity on inter-sub-band absorption in doped quantum wells

A. Kurobe, D. Newson, 1988 .

Correlation Effects on Variable Range Hopping Conduction and the Magnetoresistance

H. Kamimura, A. Kurobe, 1982 .

Wave function deformation and mobility of a two‐dimensional electron gas in a backgated GaAs‐AlGaAs heterostructure

D. Ritchie, M. Pepper, G. Jones, 1993 .

From STT-MRAM to Voltage-Control Spintronics Memory (VoCSM) in Pursuit of Memory Systems with Lower Energy Consumption

N. Shimomura, H. Yoda, T. Inokuchi, 2019, Journal of Magnetics.

High speed, zero—bias modulation of low threshold MQW laser diodes

H. Furuyama, A. Kurobe, M. Nakamura, 1989 .

Optical Nonlinearity Due to Resonant Intersubband Transitions in Doped Quantum Wells

A. Kurobe, D. Newson, 1989 .

Possibility of optical bistability due to resonant intersubband excitation in stepped modulation‐doped quantum wells

A. Kurobe, D. Newson, 1987 .

Lateral transport studies of coupled electron gases

N. K. Patel, E. Linfield, D. Ritchie, 1996 .

A Physicochemical and Mutational Analysis of Intersubunit Interactions of Escherichia coli Ferritin A.

Daisuke Sato, H. Kihara, A. Kurobe, 2015, Biochemistry.

Ferritin Assembly Revisited: A Time-Resolved Small-Angle X-ray Scattering Study.

Daisuke Sato, Yoshiteru Yamada, Takaaki Hikima, 2016, Biochemistry.

Effect of residual doping on optimum structure of multiquantum-well optical modulators

A. Kurobe, D. Newson, 1987 .

Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers

Y. Uematsu, A. Kurobe, A. Kurobe, 1985, IEEE Journal of Quantum Electronics.

Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs

N. Sugiyama, S. Takagi, T. Tezuka, 2000 .

Simulation of saturation and relaxation of intersubband absorption in doped quantum wells

A. Kurobe, D. Newson, 1988 .

Transport properties of a wide-quantum-well velocity modulation transistor structure

E. Linfield, D. Ritchie, M. Pepper, 1994 .

Transport properties of closely separated two‐dimensional electron gases in a channel‐doped back gated high electron mobility transistor

D. Ritchie, M. Pepper, G. Jones, 1992 .

Fabrication of high mobility in situ back-gated (311)A hole gas heterojunctions

D. Ritchie, M. Pepper, M. Simmons, 1997 .

Anisotropic magnetotransport in two-dimensional electron gases on (311)B GaAs substrates

A. C. Churchill, D. Ritchie, M. Pepper, 1994 .

The growth of high mobility heterostructures on (311)B GaAs

A. C. Churchill, D. Ritchie, M. Pepper, 1995 .

Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current

T. Kamiya, T. Kamiya, R. Nagarajan, 1989 .

Ultra-high-efficient Writing in Voltage-Control Spintronics Memory(VoCSM); the Most Promising Embedded Memory for Deep Learning

M. Shimizu, H. Yoda, N. Shimomura, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Low write current and strong durability in high-speed spintronics memory (spin-Hall MRAM and VoCSM) through development of a shunt-free design process and W spin-Hall electrode

N. Shimomura, H. Yoda, M. Yoshiki, 2019 .

Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta−B Spin Hall Electrode

N. Shimomura, H. Yoda, T. Inokuchi, 2018, Physical Review Applied.

Voltage-Control Spintronics Memory (VoCSM) with Low Write Current using Highly-Selective Patterning Process

N. Shimomura, H. Yoda, K. Ikegami, 2018, Journal of Magnetics.

Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

Hiroaki Yoda, Yuichi Ohsawa, Naoharu Shimomura, 2017 .

Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode

N. Shimomura, K. Koi, K. Ikegami, 2017, IEEE Transactions on Magnetics.

Magnetoresistance in Anderson-localized systems

H. Kamimura, A. Kurobe, T. Takemori, 1983 .

Magnetoresistance in Amorphous Semiconductors

H. Kamimura, A. Kurobe, 1985 .

Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM)

N. Shimomura, H. Yoda, T. Inokuchi, 2019, Applied Physics Letters.

Electrostatic Repulsion during Ferritin Assembly and Its Screening by Ions.

Daisuke Sato, A. Kurobe, K. Fujiwara, 2016, Biochemistry.

Theory of magnetoresistance in the Anderson-localised regime of semiconductors

A. Kurobe, 1986 .

Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

M. Shimizu, H. Yoda, Y. Saito, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

High-speed voltage-control spintronics memory focused on reduction in write current

Yuichi Kato, Hiroaki Yoda, Yuichi Ohsawa, 2017, 2017 17th Non-Volatile Memory Technology Symposium (NVMTS).

Coexistence of Large Voltage Controlled Magnetic Anisotropy, Large Surface Anisotropy, and Large TMR by a new MTJ structure having MgO/CoFeB/Ir/CoFeB.

N. Shimomura, H. Yoda, T. Inokuchi, 2018, 2018 IEEE International Magnetic Conference (INTERMAG).