W. Knolle

发表

Semi-insulating silicon nitride (SinSiN) as a resistive field shield

J. W. Osenbach, J. Osenbach, W. Knolle, 1990 .

Hydrogen in semi‐insulating polycrystalline silicon films

W. Knolle, R. Benenson, H. Maxwell, 1980 .

Plasma-deposited silicon oxynitride from silane, nitrogen, and carbon dioxide or carbon monoxide or nitric oxide

J. Osenbach, W. Knolle, A. Elia, 1992 .

A Model of SIPOS Deposition Based on Infrared Spectroscopic Analysis

W. Knolle, H. Maxwell, 1980 .

A model describing the electrical behavior of a‐SiN:H alloys

J. Osenbach, W. Knolle, 1986 .

Behavior of a ‐ SiN : H and a ‐ SiON : H Films in Condensed Water

J. Osenbach, W. Knolle, 1992 .

Infrared Spectroscopic Characterization of Silicon Nitride Films—Optical Dispersion Induced Frequency Shifts

D. Allara, W. Knolle, 1986 .

Correlation of refractive index and silicon content of silicon oxynitride films

W. Knolle, 1989 .

Structure of ketyl radicals. II Electron spin resonance study of spin delocalization into perfluorinated alkyl side chains

J. Bolton, W. Knolle, 1971 .

The structure of plasma‐deposited silicon nitride films determined by infrared spectroscopy

J. W. Osenbach, J. Osenbach, W. Knolle, 1985 .

Electrical, physical, and chemical characteristics of plasma‐assisted chemical‐vapor deposited semi‐insulating a‐SiN:H and their use as a resistive field shield for high voltage integrated circuits

J. Osenbach, W. Knolle, L. Howard, 1990 .

Densification of SIPOS

W. Knolle, H. Maxwell, 1981 .

Ammonium Hexafluorosilicate Formation during Plasma Etching of Silicon Nitride

R. Huttemann, W. Knolle, 1988 .

Correlation of G/sub m/ degradation of submicrometer MOSFETs with refractive index and mechanical stress of encapsulation materials

W. Knolle, A. Harrus, W. H. Stinebaugh, 1989 .