A. Frazzetto

发表

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Marilena Vivona, Alessia Frazzetto, Filippo Giannazzo, 2014 .

Characterization of SiO2/SiC Interfaces Annealed in N2O or POCl3

C. Bongiorno, S. Lorenti, F. Giannazzo, 2014 .

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

F. Giannazzo, F. Roccaforte, P. Fiorenza, 2012 .

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

F. Giannazzo, F. Roccaforte, P. Fiorenza, 2012 .

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3

T. Chassagne, C. Bongiorno, S. Lorenti, 2014 .

Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications

F. Giannazzo, G. Greco, R. Lo Nigro, 2012 .

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

F. Giannazzo, G. Greco, F. Roccaforte, 2011, Nanoscale research letters.

Critical issues for interfaces to p-type SiC and GaN in power devices

F. Giannazzo, G. Greco, F. Roccaforte, 2012 .

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

F. Giannazzo, F. Roccaforte, R. Nigro, 2011 .

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Mario Giuseppe Saggio, Fabrizio Roccaforte, Alessia Frazzetto, 2014 .

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

R. Lo Nigro, Giuseppe Greco, Mario Giuseppe Saggio, 2017 .

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

F. Giannazzo, F. Roccaforte, V. Raineri, 2011 .

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

S. Lorenti, F. Giannazzo, F. Roccaforte, 2013, Beilstein journal of nanotechnology.

A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs

F. Giannazzo, F. Roccaforte, P. Fiorenza, 2013 .

Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC

F. Giannazzo, R. Lo Nigro, F. Roccaforte, 2012 .

Comparative Study of the Current Transport Mechanisms in Ni2Si Ohmic Contacts on n- and p-Type Implanted 4H-SiC

F. Giannazzo, G. Greco, F. Roccaforte, 2014 .

Industrial Approach for Next Generation of Power Devices Based on 4H-SiC

Mario Giuseppe Saggio, Fabrizio Roccaforte, Alfio Guarnera, 2015 .

Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors” [Appl. Phys. Lett. 99, 072117 (2011)]

F. Giannazzo, F. Roccaforte, V. Raineri, 2011 .

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

C. Bongiorno, F. Giannazzo, R. Lo Nigro, 2011, Nanoscale Research Letters.

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

Giuseppe Greco, Mario Giuseppe Saggio, Fabrizio Roccaforte, 2017 .