H. Ono

Highly Reliable GaN-MOSFETs with High Channel Mobility Gate by Selective-Area Crystallization

M. Kuraguchi, S. Nunoue, Y. Kajiwara, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures

M. Kuraguchi, S. Nunoue, Y. Kajiwara, 2019, Japanese Journal of Applied Physics.

Improvement of positive bias temperature instability characteristic in GaN MOSFETs by control of impurity density in SiO2 gate dielectric

T. Shimizu, M. Kuraguchi, A. Yoshioka, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Suppression of current collapse by Access-region Carrier Enhancement technique in GaN-MOSFETs

M. Kuraguchi, Y. Kajiwara, A. Shindome, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).