H. Shobha

发表

Novel low k Dielectric materials for nano device interconnect technology

T. Standaert, B. Peethala, D. Canaperi, 2020, 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Annealing and Impurity Effects in Co Thin Films for MOL Contact and BEOL Metallization

B. Haran, B. Peethala, J. Demarest, 2018, Journal of The Electrochemical Society.

Impact of Liner Metals on Copper Resistivity at Beyond 7nm Dimensions

T. Standaert, T. Spooner, T. Nogami, 2018, 2018 IEEE International Interconnect Technology Conference (IITC).

65nm Cu Integration and Interconnect Reliability in Low Stress K=2.75 SiCOH

S. Grunow, D. Restaino, A. Grill, 2006, 2006 International Interconnect Technology Conference.

Robust Ultrathin (20-25 nm)Trilayer Dielectric Low k Cu Damascene Cap for Sub-30 nm Nanoelectric Devices

Stephan A. Cohen, Yiheng Xu, D. Edelstein, 2012, ECS Transactions.

Patternable low-кmaterial for “greener” semiconductor manufacturing

S. Purushothaman, P. Brock, R. Sooriyakumaran, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Synergistic combinations of dielectrics and metallization process technology to achieve 22nm interconnect performance targets

Tom Mountsier, Roey Shaviv, E. Soda, 2012 .

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

A. Grill, Zhan Chen, H. Shobha, 2017 .

Post porosity plasma protection integration at 48 nm pitch

T. Standaert, D. Edelstein, A. Grill, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH

A. Grill, Zhan Chen, H. Shobha, 2016 .

Ultrathin conformal multilayer SiNO dielectric cap for capacitance reduction in Cu/low k interconnects

D. Edelstein, A. Grill, D. Priyadarshini, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)

Stephan A. Cohen, Anita Madan, C-K. Hu, 2012 .

Advanced single precursor based pSiCOH k = 2.4 for ULSI interconnects

Stephan A. Cohen, A. Grill, D. Priyadarshini, 2017 .

Optimizing ULK film properties to enable BEOL integration with TDDB reliability

E. T. Ryan, S. Gates, A. Grill, 2015, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).

Advanced metal and dielectric barrier cap films for Cu low k interconnects

A. Simon, D. Edelstein, A. Grill, 2014, IEEE International Interconnect Technology Conference.

High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility

A. Simon, D. Edelstein, C. Cabral, 2010, 2010 International Electron Devices Meeting.

Ultrathin (5-35 nm) SiCNH Dielectrics for Damascene Cu Cap Application: Thickness Scaling and Oxidation Barrier Performance Limitation

A. Grill, C. Hu, E. Liniger, 2010 .

Tailoring dielectric materials for robust BEOL reliability

E. T. Ryan, S. Gates, A. Grill, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

48nm Pitch cu dual-damascene interconnects using self aligned double patterning scheme

J. Kelly, C. Koay, Yunpeng Yin, 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

Integration of Photo-Patternable Low-κ Material into Advanced Cu Back-End-Of-The-Line

Stephan A. Cohen, S. Purushothaman, P. Brock, 2010 .

Optimization of porous ultra low-κ dielectrics (κ ≤ 2.55) for 28nm generation

E. T. Ryan, S. Gates, D. Restaino, 2011, 2011 IEEE International Interconnect Technology Conference.

Ultrathin (8-14 nm) Conformal SiN for sub-20 nm Copper/Low-k Interconnects

Daniel C. Edelstein, Alfred Grill, Jay Burnham, 2014 .

The strength of BEOL structures fabricated using low K materials and its impact on CPI failures

M. Lamorey, T. Shaw, T. Wassick, 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

The projection of the incidence of dielectric cracking during chip joining with lead free solder bumps

M. Lamorey, T. Shaw, T. Wassick, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Entropy catastrophe and configurational entropies in supercooled and superheated regimes

H. Shobha, K. Kishore, 1994 .

Mechanisms of Electromigration Damage in Cu Interconnects

C. Cabral, J. Demarest, C. Breslin, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Future on-chip interconnect metallization and electromigration

Raghuveer Patlolla, Huai Huang, James J. Kelly, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Experimental study of nanoscale Co damascene BEOL interconnect structures

D. Edelstein, J. Kelly, B. Peethala, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).

Structural dependence of density in high molecular weight esters

H. Shobha, K. Kishore, 1992 .

Fifteen Nanometer Resolved Patterns in Selective Area Atomic Layer Deposition-Defectivity Reduction by Monolayer Design.

A. Friz, A. de Silva, N. Arellano, 2018, ACS applied materials & interfaces.

Advanced BEOL Materials, Processes, and Integration to Reduce Line Resistance of Damascene Cu, Co, and Subtractive Ru Interconnects

A. Simon, D. Edelstein, A. Uedono, 2022, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Structural effects on the vaporization of high molecular weight esters

H. Shobha, G. J. Mattamal, K. Kishore, 1990 .

Thermodynamics of flow and vaporization processes in long-chain liquids

H. Shobha, K. Kishore, 1992 .

Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits

S. Gates, D. Edelstein, T. Hook, 2017, 2017 IEEE International Interconnect Technology Conference (IITC).

Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects

B. Haran, J. Demarest, J. Li, 2021, International Interconnect Technology Conference.

The Effect of Material and Process Interactions on BEOL Integration

John C. Arnold, Terry A. Spooner, Satyavolu S. Papa Rao, 2009 .

Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects

J. Y. Lee, F. H. Baumann, A. H. Simon, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Reactive Monolayers in Directed Additive Manufacturing - Area Selective Atomic Layer Deposition

A. Friz, G. Wallraff, N. Arellano, 2018, Journal of Photopolymer Science and Technology (Fotoporima Konwakai shi).

In Situ Co/SiC(N,H) Capping Layers for Cu/Low- k Interconnects

S. Nguyen, A. Grill, D. Edelstein, 2012, IEEE Electron Device Letters.

Electromigration and Line R of Graphene Capped Cu Dual Damascene Interconnect

D. Edelstein, T. Nogami, S. Schmitz, 2021, International Electron Devices Meeting.

In-situ metal/dielectric capping process for electromigration enhancement in Cu interconnects

D. Edelstein, A. Grill, F. Chen, 2012, 2012 IEEE International Interconnect Technology Conference.

CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond

T. Ando, V. Narayanan, J. Bruley, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

C. Park, N. Loubet, B. Haran, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

BEOL process integration for the 7 nm technology node

F. Mont, T. Spooner, X. Zhang, 2016, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).