Wen Liu

A highly rugged 19 dBm 28GHz PA using novel PAFET device in 45RFSOI technology achieving peak efficiency above 48%

D. Lederer, G. Freeman, Arvind Kumar, 2020, 2020 IEEE/MTT-S International Microwave Symposium (IMS).

A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation

Ru Huang, Xia An, Yangyuan Wang, 2010 .

Cap layer and multi-work-function tuning impact on TDDB/BTI in SOI FinFET devices

Wen Liu, Claude Ortolland, Andreas Kerber, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Layout dependence of gate dielectric TDDB in HKMG FinFET technology

Wen Liu, Roger Dufresne, Dinesh Badami, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).