S. Cui

发表

Evidence for Itinerant Carriers in an Anisotropic Narrow‐Gap Semiconductor by Angle‐Resolved Photoemission Spectroscopy

Yi Xie, W. Bai, Chong Xiao, 2018, Advanced materials.

Electronic Structures of Cr-Intercalated ZrTe2 Revealed by Angle-Resolved Photoemission Spectroscopy

Bo Zhang, Li Song, Zahir Muhammad, 2020 .

Observation of topological Dirac fermions and surface states in superconducting BaSn3

Z. K. Liu, A. Bostwick, C. Jozwiak, 2021, 2104.13033.

Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator.

M. Jiang, Yulin Chen, Yong Xu, 2020, Science bulletin.

Tuning the electric transport behavior of AgCrSe2 by intrinsic defects

W. Bai, Chong Xiao, S. Cui, 2021, Science China Chemistry.

Realization of Practical Eightfold Fermions and Fourfold van Hove Singularity in TaCo$_2$Te$_2$

Quansheng Wu, Yugui Yao, Hu Xu, 2022, 2208.02967.

Charge density wave phase suppression in 1T-TiSe2 through Sn intercalation

M. Adam, Xiaojun Wu, Guo-bin Zhang, 2021, Nano Research.

Measurement of the bulk and surface bands in Dirac line-node semimetal ZrSiS

Cheng Chen, Yulin Chen, Yan-Feng Chen, 2018 .

Electronic structure in a one-Fe Brillouin zone of the iron pnictide superconductors CsFe 2 As 2 and RbFe 2 As 2

X. H. Chen, L. Zou, X. G. Luo, 2014, 1409.2300.

Realization of practical eightfold fermions and fourfold van Hove singularity in TaCo_2Te_2

Quansheng Wu, Yugui Yao, Hu Xu, 2022, npj Quantum Materials.

Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopy

S. Cui, A. Liang, N. Schröter, 2022, Tungsten.

Structural and physical properties of the new layered transition metal material Na4Cu3TaAs4

K. Peng, Xianhui Chen, J. Ying, 2020, Science China Materials.

Electronic structure of the Si-containing topological Dirac semimetal CaAl2Si2

A. Bostwick, C. Jozwiak, E. Rotenberg, 2020, 2006.09633.

Realizing Kagome Band Structure in Two-Dimensional Kagome Surface States of RV_{6}Sn_{6} (R=Gd, Ho).

Stephen D. Wilson, Z. Qiao, B. Ortiz, 2021, Physical review letters.

Dirac nodal lines and nodal loops in the topological kagome superconductor CsV3Sb5

Junhao Lin, D. Shen, Chaoyu Chen, 2022, Physical Review B.

Dirac Nodal Lines and Nodal Loops in a Topological Kagome Superconductor CsV$_3$Sb$_5$

Jianfeng Wang, Bing Huang, Yongqing Cai, 2021, 2111.02639.

Doping evolution of superconductivity, charge order and band topology in hole-doped topological kagome superconductors Cs(V$_{1-x}$Ti$_x$)$_3$Sb$_5$

Jinhua Wang, Jianfeng Wang, Yongqing Cai, 2021, 2110.12651.

ARPES study of the effect of Cu substitution on the electronic structure of NaFeAs

Zhongti Sun, Xianhui Chen, X. G. Luo, 2013 .

Evidence of high-temperature exciton condensation in a two-dimensional semimetal

Juan Jiang, Q. Gao, T. Chiang, 2023, Nature Communications.

Bulk Fermi Surface of Charge-Neutral Excitations in SmB_{6} or Not: A Heat-Transport Study.

K. Sun, S. Y. Li, X. H. Chen, 2016, Physical review letters.

Observation of spin-polarized surface states in the nodal-line semimetal SnTaS2

Xiaoping Zhou, Haijun Zhang, Lei Jin, 2023, Physical Review B.

Electronic band structure of epitaxial PbTe (111) thin films observed by angle-resolved photoemission spectroscopy

Jun-Wei Luo, Huizhen Wu, S. Cui, 2017, 1704.07516.

Spectroscopic evidence for Dirac nodal surfaces and nodal rings in the superconductor NaAlSi

X. Zhou, Lei Jin, S. Cui, 2022, Physical Review B.

Observation of nontrivial topological electronic structure of orthorhombic SnSe

M. X. Wang, Y. L. Chen, W. Xia, 2022, Physical Review Materials.

Origin of the exotic electronic states in antiferromagnetic NdSb

X. Wan, D. Feng, Juan Jiang, 2023, npj Quantum Materials.

Doping evolution of superconductivity, charge order, and band topology in hole-doped topological kagome superconductors Cs(V

Chaoyu Chen, Shanmin Wang, S. Cui, 2023, Physical Review Materials.

Coexistence of the hourglass and nodal-line dispersions in Nb3SiTe6 revealed by ARPES

M. Adam, Bo Zhang, Shuangming Chen, 2022, iScience.

Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

Hongjian Wu, Jiayu Dai, Fangsen Li, 2022, Communications Physics.

Strong interlayer coupling in monoclinic GaTe

Jiayu Dai, Z. Han, S. Ju, 2021 .

Persistent gapless surface states in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

C. F. Zhang, M. X. Wang, S. Jung, 2019, 1910.11014.

Measurement of the electronic structure of a type-II topological Dirac semimetal candidate VAl3 using angle-resolved photoelectron spectroscopy

S. Cui, A. Liang, N. Schröter, 2022, Tungsten.

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S. Cui, A. Liang, N. Schröter, 2023 .

Type‐II Dirac Nodal Lines in a Double‐Kagome‐Layered Semimetal

Junhao Lin, D. Shen, Chaoyu Chen, 2023, Advanced Electronic Materials.

Electronic instability of kagome metal CsV3Sb5 in the 2×2×2 charge density wave state

Xianhui Chen, J. Ying, S. Cui, 2023, Chinese Physics Letters.

Tunable Van Hove Singularity without Structural Instability in Kagome Metal CsTi_{3}Bi_{5}.

A. Bostwick, E. Rotenberg, Yugui Yao, 2022, Physical review letters.

Photoemission study of the electronic structure of valence band convergent SnSe

M. X. Wang, H. Yang, Y. L. Chen, 2017, 1804.04357.

Design and performance of a new VUV photoemission beamline at Hefei Light Source

Zhengkun Liu, S. Ju, S. Cui, 2014 .

Observation of Mott instability at the valence transition of f-electron system

Xiang Xu, S. Cui, Yi-feng Yang, 2023, National science review.

Persistence of charge density wave against variation of band structures in V_xTi_1−xSe_2(x = 0−0.1)

M. Adam, Shuangming Chen, S. Cui, 2023, Nano Research.

Angle-resolved photoemission spectroscopy study of charge density wave order in the layered semiconductor EuTe4

Haiyun Liu, J. Meng, S. Cui, 2022, Physical Review B.