Jongmyung Yoo

发表

Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective

H. Hwang, Jaehyuk Park, Sangmin Lee, 2020, IEEE Transactions on Electron Devices.

Effect of cation amount in the electrolyte on characteristics of Ag/TiO2 based threshold switching devices

H. Hwang, Jeonghwan Song, Jongmyung Yoo, 2018, Nanotechnology.

A C–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application

Solomon Amsalu Chekol, H. Hwang, Jeonghwan Song, 2018, Nanotechnology.

Steep Slope Field-Effect Transistors With B–Te-Based Ovonic Threshold Switch Device

H. Hwang, Jeonghwan Song, Donguk Lee, 2018, IEEE Journal of the Electron Devices Society.

Te-based binary OTS selectors with excellent selectivity (>105), endurance (>108) and thermal stability (>450°C)

Solomon Amsalu Chekol, H. Hwang, Jeonghwan Song, 2018, 2018 IEEE Symposium on VLSI Technology.

Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions

H. Hwang, I. Karpov, Hyoung-Seop Kim, 2020, IEEE Electron Device Letters.

Excellent threshold switching device (Ioff ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd = 0.25 V) FET applications

H. Hwang, Jeonghwan Song, J. Woo, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Additional hardening in harmonic structured materials by strain partitioning and back stress

Hyung Keun Park, H. Hwang, K. Ameyama, 2018 .

Superradiance from one-dimensionally aligned ZnO nanorod multiple-quantum-well structures

G. Yi, M. Ohtsu, S. Sangu, 2012 .

Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices

Hyunsang Hwang, Jiyong Woo, Jeonghwan Song, 2017, IEEE Transactions on Electron Devices.

Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices

Hyunsang Hwang, Jaehyuk Park, Jeonghwan Song, 2017 .

Selector devices for emerging memories

Jaehyuk Park, Hyunsang Hwang, Jeonghwan Song, 2020 .

3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications

Solomon Amsalu Chekol, H. Hwang, Jeonghwan Song, 2019, Advanced Electronic Materials.

NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time

H. Hwang, Dongwook Lee, Jaehyuk Park, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors

Hyunsang Hwang, Jaehyuk Park, Kibong Moon, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Various Threshold Switching Devices for Integrate and Fire Neuron Applications

Hyunsang Hwang, Jaehyuk Park, Kibong Moon, 2019, Advanced Electronic Materials.

Hybrid Selector With Excellent Selectivity and Fast Switching Speed for X-Point Memory Array

H. Hwang, Jeonghwan Song, C. Sung, 2018, IEEE Electron Device Letters.

An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application

Solomon Amsalu Chekol, H. Hwang, Jeonghwan Song, 2019, Applied Physics Letters.

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

Hyunsang Hwang, Jiyong Woo, Jeonghwan Song, 2015 .

Thermally Stable Te-based Binary OTS Device for Selector Application

Hyunsang Hwang, Solomon Amsalu Chekol, Jongmyung Yoo, 2018, 2018 Non-Volatile Memory Technology Symposium (NVMTS).

Nanophotonic energy up conversion using ZnO nanorod double-quantum-well structures

G. Yi, M. Ohtsu, S. Sangu, 2009 .

Field-induced nucleation switching in binary ovonic threshold switches

H. Hwang, Jaehyuk Park, Sangmin Lee, 2019 .