Lina Wei-Wei Fang

Study of interfaces between phase-change material Ge2Sb2Te5 and prevalent complementary metal-oxide semiconductor materials by XPS†

Yee-Chia Yeo, Zheng Zhang, Jisheng Pan, 2012 .

Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology

Luping Shi, Tow Chong Chong, Rong Zhao, 2011 .

Phase change random access memory featuring silicide metal contact and high-κ interlayer for operation power reduction

R. Zhao, K. Lim, T. Chong, 2011 .

Silicides as new electrode/heater for compact integration of phase change memory with CMOS

R. Zhao, K. Lim, T. Chong, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Temperature-dependent phase separation during annealing of Ge2Sb2Te5 thin films in vacuum

R. Zhao, Y. Yeo, Y. Foo, 2012 .

Dependence of energy band offsets at Ge2Sb2Te5/SiO2 interface on nitrogen concentration

Luping P. Shi, R. Zhao, T. Chong, 2009 .

Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2Te5

Luping P. Shi, R. Zhao, K. Lim, 2010 .