H. Kageshima

发表

Epitaxial few-layer graphene: towards single crystal growth

Hiroki Hibino, Masao Nagase, M. Nagase, 2010 .

Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio

Hiroki Hibino, Hiroshi Yamaguchi, Masao Nagase, 2013 .

Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates

Yasuo Takahashi, Kenji Shiraishi, Masao Nagase, 2004 .

Change in magnetization of ferromagnetic Pd(001) ultrathin films induced by the strain effect of BaTiO3

T. Taniyama, K. Komatsu, H. Kageshima, 2018 .

Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy

Yoshio Watanabe, F. Maeda, H. Hibino, 2009 .

Extension of silicon emission model to silicon pillar oxidation

T. Endoh, K. Shiraishi, H. Kageshima, 2016 .

Mechanism of Reconstruction of Si(100) Surfaces

M. Tsukada, Katsuyoshi Kobayashi, H. Kageshima, 1992 .

Sorption properties of NO2 gas and its strong influence on hole concentration of H-terminated diamond surfaces

M. Kasu, M. Kubovic, H. Kageshima, 2010 .

Gate Metal Interface on Hydrogen-terminated Diamond FETs

M. Kasu, K. Ueda, H. Kageshima, 2008 .

Switching of magnetism via modifying phase shift of quantum-well states by tailoring the interface electronic structure

H. Kageshima, Tetsuya Sato, S. Sakuragi, 2019, Physical Review B.

Controlled CVD growth of lateral and vertical graphene/h-BN heterostructures

H. Hibino, H. Kageshima, Ryoichi Makino, 2020, Applied Physics Express.

In-plane conductance measurement of graphene nanoislands using an integrated nanogap probe

M. Nagase, H. Yamaguchi, H. Hibino, 2008, Nanotechnology.

Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons

M. Nagase, H. Yamaguchi, Yoshihiro Kobayashi, 2007, 0710.0469.

Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)

H. Hibino, H. Kageshima, S. Tanabe, 2011 .

Structural and electrical properties of H-terminated diamond field-effect transistor

M. Kasu, M. Kubovic, K. Ueda, 2009 .

Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0 0 0 1)

Yoshio Watanabe, F. Maeda, H. Hibino, 2008 .

First principles study of isotope effect in hydrogen-bonded K3H(SO4)2: II - Zero-point oscillation effect

S. Tsuneyuki, Y. Suwa, H. Kageshima, 2001 .

Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-Principles

M. Nagase, H. Hibino, H. Kageshima, 2010 .

Theory of the FIM image of phthalocyanine

M. Tsukada, H. Kageshima, 1990 .

Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors

M. Nagase, H. Hibino, H. Kageshima, 2011 .

Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe

M. Nagase, H. Yamaguchi, H. Hibino, 2008 .

First-principles theory of scanning tunneling microscopy

M. Tsukada, Katsuyoshi Kobayashi, H. Kageshima, 1991 .

The Role of Tip Atomic and Electronic Structure in Scanning Tunneling Microscopy and Spectroscopy

M. Tsukada, Satoshi Watanabe, T. Schimizu, 1993 .

Electrode performance of layered LiNi 0.5Ti 0.5O 2 prepared by ion exchange

Masaya Takahashi, Y. Sakurai, H. Arai, 2005 .

Quantum effects in the capacitance between a pair of thin and slightly separatedSrTiO3slabs: A first-principles study

H. Inokawa, H. Kageshima, Kazuyuki Uchida, 2006 .

Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2010 .

Origin of Schottky Barrier Modification by Hydrogen on Diamond

M. Kasu, H. Kageshima, 2009 .

Growth and low-energy electron microscopy characterizations of graphene and hexagonal boron nitride

H. Hibino, C. Orofeo, H. Kageshima, 2016 .

First-Principles Study of Interfacial Reaction Atomic Process at Silicon Oxidation

K. Shiraishi, H. Kageshima, 1997 .

First principles study of isotope effect in hydrogen-bonded K3H(SO4)2: I — stable structures

S. Tsuneyuki, Y. Suwa, H. Kageshima, 2001 .

Theory of thermal Si oxide growth rate taking into account interfacial Si emission effects

K. Shiraishi, H. Kageshima, M. Uematsu, 2001 .

Mechanism of electron attachment to van der Waals clusters: Application to carbon dioxide clusters

M. Tsukada, S. Tsuneyuki, T. Kondow, 1987 .

Theory of Electron Attachment of Van der Waals Microclusters

M. Tsukada, S. Tsuneyuki, H. Kageshima, 1987 .

Systematic theoretical investigations of miscibility in Si1−x−yGexCy thin films

K. Shiraishi, T. Ito, Y. Kangawa, 2003 .

First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide

T. Endoh, K. Shiraishi, H. Kageshima, 2019, Japanese Journal of Applied Physics.

Effect of the Si/SiO2 Interface on Diffusion in SiO2

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2005 .

Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2004 .

Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2004 .

Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2003 .

Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2003 .

Connected vacuum tail method and its application to scanning tunneling microscopy

M. Tsukada, Katsuyoshi Kobayashi, H. Kageshima, 1992 .

First-principles simulation of STM/STS of Si(100) reconstructed surfaces

M. Tsukada, Katsuyoshi Kobayashi, H. Kageshima, 1992 .

Magnetism of Single-Walled Carbon Nanotube with Pd Nanowire(Condensed matter: electronic structure and electrical, magnetic, and optical properties)

Y. Oba, H. Kageshima, Tetsuya Sato, 2008 .

Formation of stable N–V–O complexes in Si

K. Wada, H. Kageshima, A. Taguchi, 2003 .

Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth

K. Wada, H. Kageshima, A. Taguchi, 2006 .

Theoretical study of vacancy supersaturation during silicon crystal growth and nitrogen-doping effects

K. Wada, H. Kageshima, A. Taguchi, 2006 .

First-principles investigations of nitrogen-doping effects on defect aggregation processes in Czochralski Si

K. Wada, H. Kageshima, A. Taguchi, 2005 .

Instability of steps during Ga deposition on Si(1 1 1)

H. Hibino, M. Uwaha, H. Kageshima, 2008 .

Origin of ferromagnetism of MnSi1.7 nanoparticles in Si: First-principles calculations

M. Nagase, A. Fujiwara, Y. Ono, 2008 .

Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon

M. Nagase, A. Fujiwara, Y. Ono, 2008 .

Effect of the Si Õ SiO 2 interface on self-diffusion of Si in semiconductor-grade SiO 2

A. Fujiwara, U. Gösele, H. Kageshima, 2003 .

Microscopic investigation of the surface phase transition on GaAs(001) surfaces

K. Shiraishi, H. Yamaguchi, T. Ito, 1999 .

Theoretical investigation of inter-surface diffusion on non-planar GaAs surfaces

K. Shiraishi, T. Ito, H. Kageshima, 1998 .

The physics of epitaxial graphene on SiC(0001)

H. Hibino, H. Kageshima, S. Tanabe, 2012, Journal of physics. Condensed matter : an Institute of Physics journal.

Theoretical Study on Magnetoelectric and Thermoelectric Properties for Graphene Devices

M. Nagase, H. Yamaguchi, H. Hibino, 2011 .

Appearance of Ferromagnetism in Pt(100) Ultrathin Films Originated from Quantum-well States

H. Osawa, H. Kageshima, Tetsuya Sato, 2021, Journal of the Physical Society of Japan.

Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

H. Namatame, M. Taniguchi, T. Sakai, 2014 .

First-principles study of charging effect on magnetism of Pd (100) ultrathin films

T. Sakai, H. Kageshima, Tetsuya Sato, 2012 .

First-Principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface

T. Ito, T. Akiyama, H. Kageshima, 2004 .

Electronic and surface properties of H-terminated diamond surface affected by NO2 gas

Fumihiko Maeda, Makoto Kasu, M. Kasu, 2010 .

Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si

K. Wada, H. Kageshima, A. Taguchi, 2000 .

Diffusion and stability of oxygen in GaAs and AlAs

H. Kageshima, A. Taguchi, 1999 .

Momentum-matrix-element calculation using pseudopotentials

Kenji Shiraishi, K. Shiraishi, Hiroyuki Kageshima, 1997 .

Microscopic mechanism for SiO2/Si interface passivation : Si=O double bond formation

K. Shiraishi, H. Kageshima, 1997 .

Epitaxial Intercalation Growth of Scalable Hexagonal Boron Nitride/Graphene Bilayer Moiré Materials with Highly Convergent Interlayer Angles.

Y. Taniyasu, H. Hibino, J. Crowther, 2021, ACS nano.

Growth and low-energy electron microscopy characterization of monolayer hexagonal boron nitride on epitaxial cobalt

Satoru Suzuki, H. Hibino, C. Orofeo, 2013, Nano Research.

Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy

M. Nagase, H. Yamaguchi, Yoshihiro Kobayashi, 2008 .

Microscopic mechanism of thermal silicon oxide growth

K. Shiraishi, H. Kageshima, M. Uematsu, 2002 .

Surface-enhanced Raman scattering from buffer layer under graphene on SiC in a wide energy range from visible to near-infrared

M. Nagase, K. Oguri, H. Hibino, 2020, Japanese Journal of Applied Physics.

Electronic Structure and Reconstruction of Si(100) Surfaces

M. Tsukada, H. Kageshima, N. Shima, 1992 .

Theoretical calculation of core level shifts for {O}/{Si(111) } surfaces

M. Tabe, H. Kageshima, 1996 .

Novel features of surface electronic structure revealed by the theoretical simulation of scanning tunneling microscopy/spectroscopy

M. Tsukada, Satoshi Watanabe, T. Schimizu, 1993 .

First-Principles Study of Oxide Growth on Si(100) Surfaces and at SiO 2 /Si(100) Interfaces

Kenji Shiraishi, K. Shiraishi, Hiroyuki Kageshima, 1998 .

Tight-Binding Approach to Initial Stage of the Graphitization Process on a Vicinal SiC Surface

K. Wakabayashi, Y. Kangawa, K. Kakimoto, 2011 .

Selectivity for O-adsorption position on dihydride Si(100) surfaces

K. Shiraishi, H. Ikeda, S. Zaima, 2000 .

Epitaxy in Lattice-Mismatched Systems. Role of Strain in Si/SiO2 Interface Formation.

K. Shiraishi, H. Kageshima, M. Uematsu, 2000 .

Theoretical Investigation of Effective Quantum Dots Induced by Strain in Semiconductor Wires

K. Shiraishi, M. Nagase, S. Horiguchi, 1998 .

Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Simulation of Thermal Silicon Oxidation Based on a New Physical Model.

K. Shiraishi, H. Kageshima, M. Uematsu, 2002 .

Simulation of wet oxidation of silicon based on the interfacial silicon emission model and comparison with dry oxidation

K. Shiraishi, H. Kageshima, M. Uematsu, 2001 .

Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission

K. Shiraishi, H. Kageshima, M. Uematsu, 1999 .

Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model

K. Shiraishi, H. Kageshima, M. Uematsu, 2000 .

Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model

K. Shiraishi, H. Kageshima, M. Uematsu, 2000 .

Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model

K. Shiraishi, H. Kageshima, M. Uematsu, 2000 .

Growth and electronic transport properties of epitaxial graphene on SiC

H. Hibino, H. Kageshima, S. Tanabe, 2012 .

Study on Thermoelectric Properties of Graphene

H. Kageshima, 2010 .

Reconsideration of Si pillar thermal oxidation mechanism

T. Endoh, K. Shiraishi, H. Kageshima, 2018 .

Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

K. Shiraishi, K. Itoh, Motofumi Suzuki, 2006 .

Microscopic mechanism of Si oxidation

K. Shiraishi, H. Kageshima, M. Uematsu, 2001 .

Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces

K. Shiraishi, H. Kageshima, 1998 .

Oxygen concentration dependence of silicon oxide dynamical properties

T. Endoh, K. Shiraishi, H. Kageshima, 2018 .

Theoretical study of multiatomic vacancies in single-layer hexagonal boron nitride

H. Kageshima, S. Urasaki, 2017 .

Stacking domains of epitaxial few-layer graphene on SiC(0001)

M. Nagase, H. Yamaguchi, H. Hibino, 2009 .

Theoretical Study of Graphene on SiC(11-20) a-Face

H. Hibino, H. Kageshima, 2016 .

Theoretical studies of graphene on SiC

M. Nagase, H. Yamaguchi, H. Hibino, 2014, 2014 IEEE International Nanoelectronics Conference (INEC).

Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)

M. Nagase, H. Yamaguchi, H. Hibino, 2014 .

Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface

M. Nagase, H. Yamaguchi, H. Hibino, 2011 .

Electronic transport properties of top-gated monolayer and bilayer graphene devices on SiC

M. Nagase, H. Hibino, H. Kageshima, 2011 .

Mechanisms of nanochannel formation processes: Thermal oxidation of Si nanostructures and graphene formation on SiC

H. Kageshima, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

First-principles calculations for initial oxidation processes of SiC surfaces: Effect of crystalline surface orientations

K. Shiraishi, T. Ito, T. Akiyama, 2015 .

First-Principles Study of Field-Effect Doping in Nano-Scale Systems by the Enforced Fermi-Energy Difference Method

H. Inokawa, H. Kageshima, Kazuyuki Uchida, 2005 .

Theoretical Study on Origin of CVD Growth Direction Difference in Graphene/hBN Heterostructures

H. Hibino, H. Kageshima, Shengnan Wang, 2023, e-Journal of Surface Science and Nanotechnology.

First-principles study of strain effect on oxygen vacancy in silicon oxide

H. Kageshima, Kohei Yata, 2021 .

Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices

M. Nagase, H. Hibino, H. Kageshima, 2010 .

Theoretical study on role of edge termination for growth direction selectivity in chemical vapor deposition of hBN/graphene heterostructure on Cu surface

H. Hibino, H. Kageshima, Shengnan Wang, 2021, Applied Physics Express.

Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion

K. Shiraishi, K. Itoh, M. Otani, 2006 .

Simulation of correlated diffusion of Si and B in thermally grown SiO2

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2004 .

Photorefractive multiple quantum wells at 1064 nm.

T. Someya, S. Iwamoto, Y. Arakawa, 2001, Optics letters.

Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation

K. Shiraishi, T. Ito, T. Akiyama, 2021, Japanese Journal of Applied Physics.

Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface

K. Shiraishi, T. Ito, T. Akiyama, 2020, Japanese Journal of Applied Physics.

Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

K. Shiraishi, T. Ito, T. Akiyama, 2017 .

First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence

K. Shiraishi, T. Ito, T. Akiyama, 2015 .

Diffusion of carbon oxides in SiO2 during SiC oxidation: A first-principles study

T. Ito, T. Akiyama, H. Kageshima, 2013 .

Theory of graphene growth on sic substrate

H. Kageshima, 2018 .

First-Principles Calculations of Uniaxial Strain Effects on Manganese in Silicon

H. Kageshima, E. Ohta, S. Yabuuchi, 2008 .

Local conductance measurements of double-layer graphene on SiC substrate

M. Nagase, H. Yamaguchi, H. Hibino, 2009, Nanotechnology.

Theoretical Investigation of Oxygen Diffusion in Compressively Strained High-Density α-Quartz

T. Ito, T. Akiyama, H. Kageshima, 2005 .

First-principles calculation I

H. Kageshima, 2006 .

Carbonization-driven motion of Si islands on epitaxial graphene

H. Hibino, H. Kageshima, 2023, Physical Review Materials.

First-principles study on charged vacancies in MoS2

H. Kageshima, S. Urasaki, 2018, Japanese Journal of Applied Physics.

Carrier transport mechanism in graphene on SiC(0001)

M. Nagase, H. Hibino, H. Kageshima, 2011 .

Diamond RF FETs and other approaches to electronics

Kenji Ueda, Makoto Kasu, Y. Taniyasu, 2008 .

Mechanism of oxide deformation during silicon thermal oxidation

K. Shiraishi, T. Akiyama, S. Tsuneyuki, 2006 .

K. Shiraishi, K. Itoh, Yasuo Takahashi, 2004 .

Spontaneous distortion via the appearance of ferromagnetism in Pd ultrathin films: Observation of an inverse mechanism for the Stoner criterion

H. Tajiri, H. Kageshima, Tetsuya Sato, 2018, Physical Review B.

Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene

H. Hibino, Y. Harada, H. Kageshima, 2012 .

Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene

H. Hibino, Y. Harada, H. Kageshima, 2014 .

Charge-Injection Effects in a Single 4,4''-Terphenyldithiol Molecule

H. Inokawa, H. Kageshima, Kazuyuki Uchida, 2005 .

First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

T. Endoh, K. Shiraishi, M. Araidai, 2018 .

Gate interfacial layer in hydrogen-terminated diamond field-effect transistors

Kenji Ueda, Makoto Kasu, Yoshiharu Yamauchi, 2008 .

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

K. Shiraishi, T. Akiyama, H. Kageshima, 2023, Materials Science in Semiconductor Processing.

Theoretical study of the band offset at silicon-oxide/silicon interfaces with interfacial defects

K. Shiraishi, H. Kageshima, 1998 .

Photorefractive InGaAs/GaAs multiple quantum wells in the Franz–Keldysh geometry

Yasuhiko Arakawa, Takao Someya, K. Kuroda, 2001 .

Photorefractive multiple quantum well devices at 1064 nm

T. Someya, S. Iwamoto, Y. Arakawa, 2000, CLEO 2000.

Graphene Nanoribbons

A. Potekaev, H. Kageshima, S. Marthi, 2019 .

Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation

Yasuo Takahashi, Kenji Shiraishi, Masao Nagase, 2001 .

Systematic theoretical investigations of adsorption behavior on the GaAs(0 0 1)-c(4 × 4) surfaces

K. Shiraishi, T. Ito, Y. Kangawa, 2004 .

First-principles study of strain effects on Mn in Si

H. Kageshima, A. Taguchi, E. Ohta, 2006 .

Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation

T. Ito, T. Akiyama, H. Kageshima, 2008 .

Reaction mechanisms of oxygen at SiO2/Si(100) interface

T. Akiyama, H. Kageshima, 2005 .

Ab initio -based approach for the oxidation mechanisms at SiO2 /4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction

K. Shiraishi, T. Ito, T. Akiyama, 2021, Physical Review Materials.

Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands

K. Shiraishi, H. Kageshima, M. Uematsu, 2000 .