Y. Kaneko

发表

Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

S. Kamiyama, H. Amano, I. Akasaki, 2001 .

High‐optical‐quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas‐source molecular‐beam epitaxy

K. Kishino, A. Kikuchi, Y. Kaneko, 1989 .

Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy on

A. Harada, K. Kishino, Y. Kaneko, 1987 .

Study on Electroluminescence Spectrum and Waveguide Loss of GaInN Multiple Quantum Well Lasers

H. Amano, I. Akasaki, T. Takeuchi, 1999 .

Growth of vertical cavity surface emitting laser material on (3 1 1)B GaAs by MBE

S. Nakagawa, S. J. Rosner, T. Takeuchi, 1997 .

Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy

Eicke R. Weber, Piotr Perlin, Ying-Lan Chang, 1999 .

Shortest wavelength (607 nm) operations of GaInP/AlInP distributed Bragg reflector lasers

K. Kishino, D. Jang, Y. Kaneko, 1992 .

Gas source molecular beam epitaxial growth and characterization of 600–660 nm GaInP/AlInP double-heterostructure lasers

K. Kishino, A. Kikuchi, Y. Kaneko, 1993 .

600‐nm wavelength range GaInP/AlInP quasi‐quaternary compounds and lasers prepared by gas‐source molecular‐beam epitaxy

K. Kishino, A. Kikuchi, Y. Kaneko, 1993 .

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Shigeru Nakagawa, Isamu Akasaki, Hiroshi Amano, 1998 .

Melt-back etching of GaN

Isamu Akasaki, Hiroshi Amano, Yawara Kaneko, 1997 .

Strained SQW GaInP/AlInP visible lasers fabricated by a novel shutter control method in gas source molecular beam epitaxy

K. Kishino, Y. Kaneko, I. Nomura, 1992 .

Strained single quantum well (SSQW) GaInP/AlInP visible lasers fabricated by novel shutter control method in gas source molecular beam epitaxy

K. Kishino, Y. Kaneko, I. Nomura, 1992 .

Low (2.0 kA/cm/sup 2/) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15 degrees off

K. Kishino, A. Kikuchi, Y. Kaneko, 1991 .

Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers

K. Kishino, A. Kikuchi, Y. Kaneko, 1991 .

Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy

K. Kishino, A. Kikuchi, Y. Kaneko, 1990 .

Pit formation in GaInN quantum wells

Isamu Akasaki, Hiroshi Amano, Y. Kaneko, 1998 .

Refractive indices measurement of (GaInP)m/(AlInP)n quasi‐quaternaries and GaInP/AlInP multiple quantum wells

Katsumi Kishino, Yawara Kaneko, K. Kishino, 1994 .

Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy

K. Kishino, A. Kikuchi, Y. Kaneko, 1990 .

Raman Scattering from Interface Phonons in GaInP / AlInP Superlattice

K. Kishino, A. Kikuchi, Y. Kaneko, 1994 .

High-reliability, high-performance RF micromachined switch using liquid metal

Y. Kaneko, Y. Kondoh, T. Hidaka, 2005, Journal of Microelectromechanical Systems.

GaN Based Laser Diode with Focused Ion Beam Etched Mirrors

H. Amano, I. Akasaki, T. Takeuchi, 1998 .

Quantum-confined Stark effect in strained GaInN quantum wells on sapphire (0 0 0 1)

I. Akasaki, S. Nakagawa, S. Sota, 1998 .

GaN Based Laser Diode with Focused Ion Beam Etched Mirrors

H. Amano, I. Akasaki, T. Takeuchi, 1998 .