K. Balakrishnan

发表

Ultraviolet light-emitting diodes based on group three nitrides

Asif Khan, Asif Khan, Krishnan Balakrishnan, 2008 .

Defect filtration of hollow pyramidal structured GaSb epilayers grown on GaSb patterned substrates by liquid phase epitaxy

Y. Hayakawa, T. Koyama, M. Kumagawa, 2003 .

Sublimation growth of AlN bulk crystals by seeded and spontaneous nucleation methods

S. Kamiyama, H. Amano, I. Akasaki, 2004 .

Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown a-Plane GaN

V. Adivarahan, Q. Fareed, J. Dion, 2011 .

Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio

S. Kamiyama, H. Amano, I. Akasaki, 2007 .

Growth of InxGa1−xAs bulk mixed crystals with a uniform composition by the rotational Bridgman method

Y. Hayakawa, T. Ozawa, T. Koyama, 2001 .

Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaN

P. Hacke, G. Feuillet, H. Okumura, 1996 .

Analysis of MBE growth mode for GaN epilayers by RHEED

S. Chichibu, H. Okumura, S. Yoshida, 1998 .

H. Okumura, S. Yoshida, K. Balakrishnan, 1999 .

Optimization of circular trench geometry of GaAs(1 1 1)B substrates for growth of high quality InxGa1−xAs bridge layers

Y. Hayakawa, T. Koyama, M. Kumagawa, 2001 .

The coalescence of ELO layers of InxGa1-xAs grown on patterned (111) GaAs by liquid phase epitaxy

Y. Hayakawa, T. Koyama, M. Kumagawa, 2001 .

Microravity experiments on melting and crystallization of InGaSb

L. Dao, Y. Hayakawa, S. Dost, 2002 .

Drop experiments on crystallization of InGaSb semiconductor

L. Dao, Y. Hayakawa, S. Dost, 2002 .

Experimental and Numerical Analyses of Crystallization Processes of In x Ga 1-x Sb under Different Gravity Conditions

L. Dao, Y. Hayakawa, S. Dost, 1999 .

Electrodeposition and characterisation of Cu–MWCNTs nanocomposite coatings

A. Subramania, K. Balakrishnan, S. Ramalingam, 2017 .

Ohmic Contact to High-Aluminum-Content AlGaN Epilayers

V. Adivarahan, Asif Khan, K. Balakrishnan, 2009 .

Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Study on the initial stages of heteroepitaxial growth of hexagonal GaN on sapphire by plasma assisted MBE

H. Okumura, K. Balakrishnan, S. Yoshida, 1998 .

Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Using Coaxial Impact Collision Ion Scattering Spectroscopy

Yasumasa Suzuki, J. Shirakashi, H. Okumura, 2000 .

Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Mg-doped high-quality AlxGa1–xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2007 .

High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE

Y. Hayakawa, M. Kumagawa, K. Balakrishnan, 2002 .

Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Microstructure of a‐plane AlN grown on r‐plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2007 .

Preparation of Pt/alumina catalysts by the sol-gel method

R. Gonzalez, K. Balakrishnan, R. González, 1993 .

Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

S. Chichibu, M. Arita, H. Okumura, 1998 .

FTIR study of bimetallic Pt-Sn/Al2O3 catalysts

J. Schwank, K. Balakrishnan, 1992 .

The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN

H. Okumura, K. Balakrishnan, C. V. Reddy, 1998 .

Bimetallic Pt-Sn/Al2O3 and Pt-Au/SiO2 Catalysts: a Comparison of Reactivity, Adsorption Behavior and Microstructure

J. Schwank, K. Balakrishnan, A. Sachdev, 1993 .

Chemisorption and FTIR study of bimetallic PtAu/SiO2 catalysts

J. Schwank, K. Balakrishnan, A. Sachdev, 1990 .

Growth and characterization of cubic GaN

S. Chichibu, P. Hacke, G. Feuillet, 1997 .

Growth and characterization of In0.06Ga0.94Sb pyramidal epilayer

Y. Hayakawa, T. Koyama, M. Kumagawa, 2005 .

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

A novel method to grow high quality In1-xGaxAs ELO and bridge layers with high indium compositions

Y. Hayakawa, M. Kumagawa, K. Balakrishnan, 2002 .

Growth of InxGa1-xAs layers with pyramidal morphology on (100)GaAs patterned substrates by liquid-phase epitaxy

Y. Hayakawa, T. Koyama, M. Kumagawa, 2000 .

Influence of indium on the morphology of LPE grown InxGa1−xAs (x=0–0.06) epilayers on patterned GaAs(100) substrates

M. Kumagawa, K. Balakrishnan, S. Iida, 2002 .

Numerical simulation of effect of ampoule rotation for the growth of InGaSb by rotational Bridgman method

Y. Hayakawa, T. Ozawa, M. Kumagawa, 2002 .

A chemisorption and XPS study of bimetallic Pt-Sn/Al2O3 catalysts

J. Schwank, K. Balakrishnan, 1991 .

First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells

Asif Khan, Bin Zhang, Vinod Adivarahan, 2010 .

Neopentane reactions over bimetallic Pt-Sn/Al sub 2 O sub 3 and Pt-Au/SiO sub 2 catalysts

J. Schwank, K. Balakrishnan, 1991 .

Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region

V. Adivarahan, Q. Fareed, Asif Khan, 2009 .

Numerical analysis of the dissolution process of GaSb into InSb melt under different gravity conditions

Yasunori Okano, Yasuhiro Hayakawa, K. Arafune, 2003 .

Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE

S. Kamiyama, H. Amano, M. Iwaya, 2007 .

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2007 .

Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Kazuyoshi Iida, Masataka Imura, Motoaki Iwaya, 2006 .

MOCVD growth of semipolar AlxGa1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters

Vinod Adivarahan, M. Khan, D. Blom, 2011 .

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, 2007 .

Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Preparation of bimetallic Pt-Sn/alumina catalysts by the sol-gel method

K. Balakrishnan, R. González, 1994 .

III-Nitride-Based Short-Wavelength Ultraviolet Light Sources

K. Balakrishnan, A. Khan, 2011 .

Growth of Cubic GaN by MBE and Its Properties

P. Hacke, G. Feuillet, H. Okumura, 1996 .

Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation

G. Feuillet, H. Okumura, K. Balakrishnan, 1997 .

Growth and characterization of cubic AlGaN and AlN epilayers by RF-plasma assisted MBE

Tsuyoshi Inoue, H. Okumura, H. Harima, 1999 .

Present Status of Deep UV Nitride Light Emitters

Asif Khan, K. Balakrishnan, 2008 .