Xiaowei Zhou

发表

Investigation of Controlled Current Matching in Polymer Tandem Solar Cells Considering Different Layer Sequences and Optical Spacer

Y. Hao, Q. Feng, Chunfu Zhang, 2012 .

Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor

Yue Hao, Shiliu Xu, Lin-An Yang, 2009 .

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017 .

Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2020 .

Improved carrier mobility of InAlN/GaN heterostructure grown on cone-shaped patterned sapphire substrate

Y. Hao, Jincheng Zhang, Shengrui Xu, 2014 .

Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, IEEE Transactions on Electron Devices.

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates

Y. Hao, Jiangtao Wu, Jinxing Wu, 2020, Materials.

Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

The Recessed Trapezoidal Groove Dual‐Gate AlGaN/GaN E‐Mode Transistor by Using Depletion Enhancement Effect

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018 .

Structural and optical investigation of nonpolar a-plane GaN grown by metal?organic chemical vapour deposition on r-plane sapphire by neutron irradiation

Y. Hao, Jincheng Zhang, Zhiyu Lin, 2012 .

Improvements in (112̅2) semipolar GaN crystal quality by graded superlattices

Y. Hao, Zhiyu Lin, Xiaowei Zhou, 2012 .

Double superlattice structure for improving the performance of ultraviolet light-emitting diodes

Y. Hao, Yanyong Zi, Jinxing Wu, 2019, Chinese Physics B.

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si $\delta$ -Doped AlGaN/GaN:C HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, IEEE Transactions on Electron Devices.

Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2017 .

Superior transport properties of InGaN channel heterostructure with high channel electron mobility

Y. Hao, Jincheng Zhang, Yue Hao, 2016 .

High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition

Lin-An Yang, Y. Hao, Jincheng Zhang, 2011 .

High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Performance Comparison of Conventional and Inverted Organic Bulk Heterojunction Solar Cells From Optical and Electrical Aspects

Y. Hao, Q. Feng, Chunfu Zhang, 2013, IEEE Transactions on Electron Devices.

Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Electron Device Letters.

Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer

Y. Hao, Jiangtao Wu, Jinxing Wu, 2021, IEEE Photonics Journal.

Ion beam sputtering-deposited thermally annealed h-BN transferred film for improving GaN crystal quality

Zhimin Li, Wang Yanli, Jinxing Wu, 2022 .

Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes

Y. Hao, Xiaohua Ma, Jincheng Zhang, 2017, IEEE Transactions on Nuclear Science.

High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, Journal of Physics D: Applied Physics.

Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO2 Nanosphere Mask Lithography with the Dip-Coating Method

Jinxing Wu, Xiaowei Zhou, Peixian Li, 2021, Nanomaterials.

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Y. Hao, Xiao-hua Ma, Chong Wang, 2017 .

Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

Y. Hao, Jincheng Zhang, Zhizhe Wang, 2015 .

Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

Ziyang Liu, Y. Hao, Jincheng Zhang, 2012 .

Comparative Study on Charge Trapping Induced ${V}_{\textsf{th}}$ Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

Xiaohua Ma, Yue Hao, Qing Zhu, 2018, IEEE Transactions on Electron Devices.

High Performance Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Diffusion-Controlled Interface Oxidation Technique

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Transactions on Electron Devices.

Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers

Shiliu Xu, Lin-An Yang, Yue Hao, 2009 .

Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes

Y. Hao, Jinxing Wu, Shengrui Xu, 2020, Materials.

Significant Degradation of AlGaN/GaN High-Electron Mobility Transistors With Fast and Thermal Neutron Irradiation

Y. Hao, Xiao-hua Ma, Xiaowei Zhou, 2019, IEEE Transactions on Nuclear Science.

Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2O3/AlN Gate-Stack

Y. Hao, Xiao-hua Ma, Bin Hou, 2017, IEEE Transactions on Electron Devices.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Y. Hao, Jincheng Zhang, Dazheng Chen, 2016 .

Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

Ziyang Liu, Y. Hao, Jincheng Zhang, 2011 .

Point defect determination by photoluminescence and capacitance—voltage characterization in a GaN terahertz Gunn diode

Lin-An Yang, Y. Hao, Jincheng Zhang, 2013 .

InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition

Y. Hao, Ya Zhang, Jin Cheng Zhang, 2015 .

Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition

Y. Hao, Jincheng Zhang, Dazheng Chen, 2015 .

Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys

Y. Hao, Jincheng Zhang, Shengrui Xu, 2015 .

Reduction of threading dislocations in N-polar GaN using a pseudomorphicaly grown graded-Al-fraction AlGaN interlayer

Lin-An Yang, Y. Hao, Jincheng Zhang, 2014 .

Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020 .

Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition

Lin-An Yang, Y. Hao, Jincheng Zhang, 2010 .

Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing

Y. Liu, Yang Liu, R. Liu, 2023, Micromachines.

Defect reduction in (1 1 2̄ 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers

Ziyang Liu, Lin-An Yang, Jincheng Zhang, 2011 .