W. Lai

On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress conditions

Jordi Suñé, Ernest Y. Wu, E. Wu, 2002 .

Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process

Y. Liu, T. Nigam, S. Uppal, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling

E. Nowak, E. Wu, W. Lai, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Critical evaluation of hard-breakdown based reliability methodologies for ultrathin gate Oxides

E. Wu, J. Suñé, W. Lai, 2004 .

Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond

T. Ando, V. Narayanan, J. Bruley, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides

Jordi Suñé, Ernest Y. Wu, Edward J. Nowak, 2002 .

Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide

R. Bolam, M. Khare, J. Sune, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

Edward J. Nowak, Ernest Y. Wu, Wing L. Lai, 2002, IBM J. Res. Dev..

Statistics of competing post-breakdown failure modes in ultrathin MOS devices

J. Sune, J. Suñé, W.L. Lai, 2006, IEEE Transactions on Electron Devices.

Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing

G. Burbach, D. Greenlaw, S.F. Huang, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Critical reliability challenges in scaling SiO2-based dielectric to its limit

Jordi Suñé, Edward J. Nowak, Ernest Y. Wu, 2003, Microelectron. Reliab..