Xing Wu

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

Nagarajan Raghavan, Michel Bosman, Gang Zhang, 2011, Nanotechnology.

Nanoscale characterization of resistive switching phenomena in HFO2-based stacks using transmission electron microscopy and atomistic simulation

Xing Wu, 2012 .

Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

K. Pey, N. Raghavan, M. Bosman, 2012 .

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Qi Liu, Litao Sun, K. Pey, 2018, Advanced science.

Recommended Methods to Study Resistive Switching Devices

Nagarajan Raghavan, Jordi Suñé, H.-S. Philip Wong, 2018, Advanced Electronic Materials.

Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack

S. Mahapatra, K. Pey, P. K. Singh, 2012 .

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

Gang Zhang, K. Pey, P. Bai, 2011, Nanotechnology.