B. Long

Effects of Mg-Doping on ${\rm HfO}_{2}$ -Based ReRAM Device Switching Characteristics

Saptarshi Mandal, Rashmi Jha, R. Jha, 2013, IEEE Electron Device Letters.

Understanding the impact of diode parameters on sneak current in 1Diode 1ReRAM crossbar architectures

Yibo Li, Branden Long, Rashmi Jha, 2013, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH).

Study of Synaptic Behavior in Doped Transition Metal Oxide-Based Reconfigurable Devices

Saptarshi Mandal, Branden Long, Rashmi Jha, 2013, IEEE Transactions on Electron Devices.

Switching dynamics and charge transport studies of resistive random access memory devices

Saptarshi Mandal, Kevin D. Leedy, Branden Long, 2012 .

Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell non-volatile memory applications

Wenchao Lu, Swarup Bhunia, Branden Long, 2015 .

Doped HfO2 based nanoelectronic memristive devices for self-learning neural circuits and architecture

Branden Long, Saptarshi Mandal, Ammaarah El-Amin, 2013, 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH).

Temperature Dependent Studies to Understand the Mechanism of Switching in Resistive Random Access Memory Devices

D. Gilmer, G. Bersuker, R. Jha, 2013 .

Invited) Understanding the Role of Dopants in Transition Metal Oxide Dielectrics for Digital and Analog Resistive Switching

R. Jha, S. Mandal, B. Long, 2013 .

A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen

M. Chowdhury, R. Jha, V. Devabhaktuni, 2012 .