Fei Guo

The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO 4 ‐based resistive switching memory

Yi Du, Xiaobing Yan, Long Ren, 2020 .

Evidence for the dynamic relaxation behavior of oxygen vacancies in Aurivillius Bi2MoO6 from dielectric spectroscopy during resistance switching

Yi Du, Shuaipeng Ge, Y. Huan, 2019, Journal of Materials Chemistry C.