F. Harun

Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature

J. David, Siming Chen, A. Mellor, 2018, Semiconductor Science and Technology.

Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures

D. F. Reyes, B. Majlis, J. David, 2015 .

Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices

John P. R. David, Nicholas J. Ekins-Daukes, Alexander Mellor, 2017 .

Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods

J. David, R. Richards, T. Rockett, 2022, Journal of Crystal Growth.

Effect of bismuth flux on the optical and morphological properties of GaAsBi grown by Molecular Beam Epitaxy

J. David, R. Richards, F. Harun, 2022, 2022 IEEE 8th International Conference on Smart Instrumentation, Measurement and Applications (ICSIMA).

Influence of growth conditions on the structural and opto-electronic quality of GaAsBi

Y. Gu, J. David, R. Richards, 2017 .

Opto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic Applications

J. David, R. Richards, F. Harun, 2020 .