O. Nam

发表

Thermal analysis of GaN‐based laser diode package

Joon Seop Kwak, Moo Whan Shin, Yu-Sun Park, 2006 .

Enhancement of photo- and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate

Heon Lee, Heon Lee, Kyeong-Jae Byeon, 2011 .

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Carl-Mikael Zetterling, Robert F. Davis, Mikael Östling, 2002 .

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Robert F. Davis, Michael D. Bremser, O. H. Nam, 1997 .

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Robert F. Davis, Michael D. Bremser, O. H. Nam, 1997 .

Self-assembled growth of inclined GaN nanorods on (10 10) m-plane sapphire using metal-organic chemical vapor deposition

Jaehwan Kim, O. Nam, Jongjin Jang, 2015 .

Three-dimensional ZnO hybrid nanostructures for oxygen sensing application

M. Jeong, J. Myoung, Taekwon Kim, 2006 .

Regrowth of Semipolar GaN on Nanoporous GaN Template by Metal Organic Chemical Vapor Deposition

Dong-hun Lee, B. Kong, H. Cho, 2010 .

Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics

H. Ryu, K. Ha, J. Shim, 2006 .

Single-mode blue-violet laser diodes with low beam divergence and high COD level

Y.J. Park, H.G. Kim, T. Jang, 2006, IEEE Photonics Technology Letters.

Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer

H. Ryu, K. Ha, Y. Park, 2009 .

Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics

H. Ryu, K. Ha, Y. Park, 2008 .

Development of AlInGaN-based Blue laser diodes

Y. Park, J. Son, O. Nam, 2007, LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings.

Negative characteristic temperature of InGaN blue multiple-quantum-well laser diodes

H. Ryu, K. Ha, K. Kim, 2007 .

Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes

H. Ryu, K. Ha, Y. Park, 2008, IEEE Electron Device Letters.

High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers

H. Ryu, J. Shim, J. Son, 2007, IEEE Photonics Technology Letters.

Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate

J. Han, J. Kwak, Jaehee Cho, 2001 .

Colour-crafted phosphor-free white light emitters via in-situ nanostructure engineering

O. Nam, Kyuseung Lee, Daehong Min, 2017, Scientific Reports.

Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition

O. Nam, Jongjin Jang, Kyuseung Lee, 2015, Scientific Reports.

Study of green light-emitting diodes grown on semipolar (11–22) GaN/m-sapphire with different crystal qualities

K. Song, Sungnam Lee, O. Nam, 2011 .

Characterization of optical and electrical quality of Mg-doped InxGa1−xN grown by MOCVD

E. Yoon, Y. Park, Sungnam Lee, 2004 .

Fabrication of AIN Nano-Structures Using Polarity Control by High Temperature Metalorganic Chemical Vapor Deposition.

O. Nam, D. Eom, Jinwan Kim, 2015, Journal of nanoscience and nanotechnology.

Large-area far ultraviolet-C emission of Al0.73Ga0.27N/AlN multiple quantum wells using carbon nanotube based cold cathode electron-beam pumping

Sung Tae Yoo, K. Park, O. Nam, 2020 .

Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping

Sung Tae Yoo, H. Lee, O. Nam, 2019, AIP Advances.

Growth of GaN and Al0.2Ga0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy

R. Davis, R. Nemanich, O. Nam, 1997 .

Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy

R. Davis, R. Nemanich, O. Nam, 1996 .

Effect of defects on the luminescence in semipolar InGaN/GaN quantum wells on planar and patterned m‐plane sapphire substrate

O. Nam, Jongjin Jang, Kwanjae Lee, 2012 .

Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method

J. Song, Joo-hyun Lee, O. Nam, 2021, AIP Advances.

Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates

Seoung-Hwan Park, Y. Park, Yong‐Hoon Cho, 2007 .

Time-Resolved Photoluminescence Measurements of In 0.15 Ga 0.85 N/In 0.015 Ga 0.985 N Quantum Wells with Si-doped Barriers

Y. Park, Young-Jun Yu, C. Sone, 2000 .

Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate

C. Sone, Yongjo Park, O. Nam, 1999 .

Effect on optical, structural and electrical properties by the AlGaN/AlGaN multi quantum wells with different well and barrier thicknesses

O. Nam, Joohyoung Lee, Byeongchan So, 2019, Thin Solid Films.

Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells

Young-Jun Yu, C. Sone, Yongjo Park, 2000 .

Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1−xN quantum wells

C. Sone, Yongjo Park, O. Nam, 2000 .

Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate

Kyu-Pil Lee, H. Cha, O. Nam, 2017 .

Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNx insertion layer: Influence of dislocations

H. Amano, O. Nam, Jongjin Jang, 2016 .

Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst

Jaehwan Kim, Yong‐Hoon Cho, Yang-Seok Yoo, 2015, Nanotechnology.

Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition

T. Jang, O. Nam, Byeongchan So, 2019, Thin Solid Films.

Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition

S. Bae, Seong-Min Jeong, O. Nam, 2022, Materials.

Self-compensation effect in Si-doped Al0.55Ga0.45N layers for deep ultraviolet applications

O. Nam, Jinwan Kim, M. Jeon, 2015 .

Raman Analysis Of Al x Ga 1-x N Films

M. Dutta, R. Davis, R. Nemanich, 1997 .

Photoelectrochemical Capacitance-Voltage Measurements in GaN

C. E. Stutz, D. Look, R. Davis, 1998 .

Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells

Y. Park, C. Sone, O. Nam, 2001 .

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

R. Davis, T. Zheleva, O. Nam, 2001 .

Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes

H. Ryu, Yongjo Park, Yong‐Hoon Cho, 2008 .

Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD

Yongjo Park, E. Yoon, Ji-Young Kim, 2004 .

Micro-photoluminescence study of InxGa1-xN/GaN quantum wells

C. Sone, Yongjo Park, Tae Geun Kim, 2000 .

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

Jaehwan Kim, O. Nam, Jongjin Jang, 2016 .

Growth mechanism of InGaN nanodots on three‐dimensional GaN structures

O. Nam, Daehong Min, Donghwy Park, 2017 .

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

Jaehwan Kim, O. Nam, Jongjin Jang, 2014 .

A Nonpolar a-Plane GaN Grown on a Hemispherical Patterned r-Plane Sapphire Substrate

Hyunsung Park, B. Kong, Y. Moon, 2011 .

Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates

Yu-Sun Park, Yong‐Hoon Cho, A. Gokarna, 2007 .

Growth and characterization of AlxGa1-xN LEO substrates

H. Ryu, Y. Park, T. Sakong, 2006 .

GROWTH, DOPING AND CHARACTERIZATION OF EPITAXIAL THIN FILMS AND PATTERNED STRUCTURES OF ALN, GAN, AND ALXGA1-XN

T. Gehrke, R. Davis, T. Zheleva, 1999 .

Optical and structural properties of lateral epitaxial overgrown GaN layers

R. Davis, T. Zheleva, O. Nam, 1998 .

Growth and Characterization of GaN and AL x GA 1−x N Thin Films Achieved Via Lateral- and/or Pendeo-Epitaxial Overgrowth on 6H-SIC(0001) Substrates

T. Gehrke, R. Davis, K. Linthicum, 1998 .

Lateral Epitaxy Formation Mechanism And Microstructure Of Selectively Grown Gan Structures

R. Davis, T. Zheleva, O. Nam, 1997 .

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

R. Davis, R. Nemanich, R. Schlesser, 1998 .

Correlation between luminescence and defects in nonpolar and semipolar InGaN/GaN quantum wells on planar and patterned sapphire substrates

O. Nam, Jongjin Jang, Seunga Lee, 2014, Electronic Materials Letters.

Nonpolar a-GaN epilayers with reduced defect density using patterned r-plane sapphire substrates

B. Kong, O. Nam, B. Jung, 2013 .

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Robert F. Davis, Michael D. Bremser, O. H. Nam, 1998 .

GaN-based light-emitting diodes with Ni–Mg solid solution/Au p-type ohmic contact

T. Seong, J. Kwak, S. H. Kim, 2004 .

Temperature-dependent contact resistivity of the nonalloyed ohmic contacts to p-GaN

J. Kwak, Yongjo Park, O. Nam, 2004 .

Carrier Transport Mechanism of Pd/Pt/Au Ohmic Contacts to p-GaN in InGaN Laser Diode

J. Kwak, Jaehee Cho, Y. Park, 2002 .

New contact resistivity characterization method for non-uniform ohmic contacts on GaN

J. Kwak, Yu-Sun Park, O. Nam, 2006 .

Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate

O. Nam, Seong-Woo Kim, Byeongchan So, 2021 .

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

K. Seo, H. Cha, T. Jang, 2019, physica status solidi (a).

Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer

J. Song, Joonyeon Chang, O. Nam, 2020 .

Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers

C. Sone, Yongjo Park, O. Nam, 2001 .

Efficiency Improvement of Deep‐Ultraviolet Light Emitting Diodes with Gradient Electron Blocking Layers

O. Nam, Jinwan Kim, Byeongchan So, 2018 .

Optical properties of InGaN/GaN double quantum wells with varying well thickness

C. Sone, Yongjo Park, O. Nam, 2001 .

Investigation of Pd∕Ti∕Al and Ti∕Al Ohmic contact materials on Ga-face and N-face surfaces of n-type GaN

Yu-Sun Park, O. Nam, T. Jang, 2006 .

Growth, doping and characterization of AlxGa1 − xN thin film alloys on 6H-SiC(0001) substrates

R. Davis, D. Aspnes, T. Zheleva, 1997 .

Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates

R. Davis, D. Aspnes, T. Zheleva, 1996 .

Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures

O. Nam, Seong-Woo Kim, Uiho Choi, 2021, Diamond and Related Materials.

Diamond Schottky barrier diode fabricated on high-crystalline quality misoriented heteroepitaxial (001) diamond substrate

O. Nam, Seong-Woo Kim, Uiho Choi, 2023, Diamond and Related Materials.

Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition

O. Nam, Seong-Woo Kim, Byeongchan So, 2020, physica status solidi (a).

Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method

O. Nam, Jinwan Kim, Jaedo Pyeon, 2018, Scientific Reports.

Electron emission properties of crystalline diamond and III-nitride surfaces

H. Ade, R. Davis, R. Nemanich, 1998 .

High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

T. Seong, J. Kwak, June O. Song, 2003 .

Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet

O. Nam, Jinwan Kim, M. Jeon, 2015 .

Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire

Sungnam Lee, T. Sakong, J. Son, 2007 .

Characteristics of GaN-based laser diodes for post-DVD applications

Joon Seop Kwak, Han-Youl Ryu, Kyoung-ho Ha, 2004 .

Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters

Young-Sik Park, Yong-Hoon Cho, Ki-Soo Lim, 2003 .

Improved Performance of (112̄2) Semipolar InGaN/GaN Light-Emitting Diodes Grown Using a Hemispherically Patterned SiO2 Mask

O. Nam, S. Moon, Daehong Min, 2013 .

Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

T. Seong, J. Kwak, June O. Song, 2003 .

Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

R. Davis, R. Loesing, D. Griffis, 1998 .

Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition

O. Nam, Byeongchan So, Uiho Choi, 2019, Journal of Crystal Growth.

Optical Characterization of Lateral Epitaxial Overgrown GaN Layers

R. Davis, J. Freitas, O. Nam, 1998 .

Structural and optical characterization of (11‐22) semipolar GaN on m ‐plane sapphire without low temperature buffer layer

Jihoon Kim, Sungnam Lee, H. Kim, 2010 .

Highly stable temperature characteristics of InGaN blue laser diodes

Hyun-Surk Kim, Han-Youl Ryu, Kyoung-ho Ha, 2006 .

Defect reduction in (11–22) semipolar GaN with embedded InN islands on m-plane sapphire

O. Nam, Jongjin Jang, Jinwan Kim, 2013 .

Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer

Kyungjae Lee, Joocheol Jeong, O. Nam, 2013 .

Functionalized inclined-GaN based nanoneedles

Yeu‐Chun Kim, Dasom Yang, Hyeonaug Hong, 2017 .

Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor

U-In Chung, Byung-Il Ryu, In-Seok Yeo, 2006, 2006 International Electron Devices Meeting.

Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to p-GaN

J. Kwak, Yongjo Park, O. Nam, 2002 .

Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire

J. Kwak, H. Ryu, K. Ha, 2007 .

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

K. Seo, H. Cha, T. Jang, 2019, Japanese Journal of Applied Physics.

High-power AlInGaN-based violet laser diodes with InGaN optical confinement layers

Kyoung-ho Ha, Joong-Kon Son, Ho-sun Paek, 2008 .

High-power GaN-based blue-violet laser diodes with AlGaN∕GaN multiquantum barriers

Han-Youl Ryu, Euijoon Yoon, Sang-Hwan Cho, 2006 .

Growth pressure dependence of residual strain and threading dislocations in the GaN layer

Sangsoo Kim, E. Yoon, D. Noh, 2004 .

High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate

Sanghoon Han, O. Nam, Seong-Woo Kim, 2021, Diamond and Related Materials.

Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 112¯2 InGaN/GaN Multi-Quantum Wells

M. Sheen, Cheol‐Woong Yang, Jong-Hwa Baek, 2023, Nanomaterials.

Improvement of crystal quality and optical property in (11−22) semipolar InGaN/GaN LEDs grown on patterned m-plane sapphire substrate

B. Kong, O. Nam, Jongjin Jang, 2012 .

High power AlInGaN-based blue-violet laser diodes

O. H. Nam, S. N. Lee, T. Sakong, 2006, SPIE OPTO.

Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics

Han-Youl Ryu, Kyoung-ho Ha, Yongjo Park, 2005, SPIE OPTO.

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

Hyunjae Lee, O. Nam, Sangil Lee, 2016 .

Characteristics of long wavelength InGaN quantum well laser diodes

Mi-Yang Kim, S. N. Lee, T. Jang, 2008 .

Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity

Juhun Lee, O. Nam, Byeongchan So, 2020 .

On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer

S. An, H. Cha, Hyun-Seop Kim, 2022, Applied Physics Letters.

Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Dong-hun Lee, B. Kong, H. Lee, 2011 .

Organometallic Vapor Phase Lateral Epitaxy of Low Defect Density GaN Layers

R. Davis, T. Zheleva, O. Nam, 1997 .

Defect reduction of SiN x embedded m-plane GaN grown by hydride vapor phase epitaxy

O. Nam, Jongjin Jang, Kyuseung Lee, 2014 .

Fabrication of AlInGaN-based blue-violet laser diode with low input power

Joon Seop Kwak, Su-hee Chae, Kyoung-ho Ha, 2004 .

Variation of GaN valence bands with biaxial stress and quantification of residual stress

R. Davis, T. Kuech, D. Aspnes, 1997 .

Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers

O. Nam, Jinwan Kim, Joohyoung Lee, 2018, RSC advances.

Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method

O. Nam, Okhyun Nam, Jinwan Kim, 2018, Scientific Reports.

Enhanced optical properties of InGaN MQWs with InGaN underlying layers

Yong‐Hoon Cho, T. Sakong, J. Son, 2006 .

Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes

J. Kwak, Y. Park, O. Nam, 2004, IEEE Photonics Technology Letters.

Comprehensive study of time-lapsed peak shift in InGaN quantum well structures: Discrimination of localization effect from internal field effect

Han-Youl Ryu, Yong-Hoon Cho, Kyoung-ho Ha, 2007 .

Analysis of optical loss on blue-violet laser diodes

Yong‐Hoon Cho, T. Sakong, J. Son, 2006 .

Investigation of internal field effect and blue‐shift in InGaN‐based blue laser diodes by time‐resolved optical technique

H. Ryu, K. Ha, Yong‐Hoon Cho, 2007 .

Surface modifications and optical properties of blue InGaN single quantum well by in-situ thermal treatments

Sungnam Lee, T. Sakong, J. Son, 2007 .

Radiative and non-radiative transitions in blue quantum wells embedded in AlInGaN-based laser diodes

K. Ha, T. Sakong, J. Son, 2007 .

High-quality a-plane (11–20) GaN growth using double-lens structure on r-plane sapphire

J. Kwak, Hyeong Jin Kim, O. Nam, 2014 .

InGaN/GaN multi-quantum well distributed Bragg reflector laser diode

Jaehee Cho, C. Sone, Seongho Cho, 2000 .

Atomic Force Microscopy Study of GaN-Buffer Layers on SiC(0001) By MOCVD

I. Choi, Gyeungho Kim, O. Nam, 1996 .

AlN Nanostructures Fabricated on a Vicinal Sapphire (0001) Substrate

O. Nam, Jinwan Kim, M. Jeon, 2015 .

Comparison between the relaxation mechanisms of thick (0001) polar and semipolar InGaN layers

Jaehwan Kim, O. Nam, Jongjin Jang, 2015 .