S. Nishine

发表

ZnSe-based white LEDs

T. Matsuoka, Koji Katayama, K. Katayama, 2000 .

Thermodynamic Properties and Crystal Structures of Nonstoichiometric Niobium Selenides NbSe x for x =1.48−2.00

S. Nishine, K. Igaki, 1979 .

Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates

H. Katahama, I. Fujimoto, H. Seto, 1990 .

Si doping and MBE growth of GaAs on tilted (111)A substrates

H. Katahama, I. Fujimoto, H. Seto, 1991 .

Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

K. Katayama, T. Matsuoka, H. Matsubara, 1998 .

Effects of Substrate Misorientation and the Growth Mechanism of Si Doped GaAs Grown on (111)A Substrate by MBE

I. Fujimoto, H. Seto, S. Nishine, 1989 .

MICROSCOPIC STRUCTURE AND COMPENSATION MECHANISM OF HEAVILY Si-DOPED GaAs GROWN ON (111)A, B AND (100) SUBSTRATES BY MOLECULAR BEAM EPITAXY

H. Katahama, K. Nakanishi, I. Fujimoto, 1990 .

Computer-Controlled Mapping of Photoluminescence Intensities

S. Nishine, Kazuhisa Matsumoto, M. Yokogawa, 1984 .

Characterization of ZnSe homo-interface grown by MBE

T. Matsuoka, F. Nakanishi, H. Doi, 1997 .

Effects of Whole Ingot Annealing on 1.49 eV PL Properties in LEC-Grown Semi-Insulating GaAs

M. Sasaki, S. Nishine, Kazuhisa Matsumoto, 1984 .

Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth

H. Katahama, I. Fujimoto, H. Seto, 1989 .