I. Takayanagi

发表

A 4.6μm, 512×512, Ultra-Low Power Stacked Digital Pixel Sensor with Triple Quantization and 127dB Dynamic Range

Wei Gao, K. Mori, J. Nakamura, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Amplified MOS imager for soft X-ray imaging

K. Matsumoto, Y. Iketaki, Y. Horikawa, 1995 .

A 250 k-pixel SIT image sensor operating in its high-sensitivity mode

S. Hashimoto, H. Nakajima, I. Takayanagi, 1991 .

A 120-ke− Full-Well Capacity 160-µV/e− Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor †

Ken Miyauchi, Isao Takayanagi, Shigetoshi Sugawa, 2019, Sensors.

A 1-inch Optical Format , 80 fps , 10 . 8 Mpixel CMOS Image Sensor Operating in a Pixel-to-ADC Pipelined Mode

K. Mori, J. Nakamura, I. Takayanagi, 2022 .

A2-MpixelCMOSImageSensorwithDevice Authentication and Encryption Key Generation based on Physically Unclonable Function

M. Shirahata, I. Takayanagi, T. Fujino, 2019 .

P 01 A Proposal of PUF Utilizing Pixel Variations in the CMOS Image Sensor

M. Shirahata, T. Fujino, I. Takayanagi, 2017 .

Higher Subband Effect on the Spin-Orbit Interaction in a 2D System in InAs n-Inversion Layers

S. Kawaji, I. Takayanagi, Y. Kawaguchi, 1988 .

Spin-Orbit Interaction in Two Dimensional Systems in InAs n-Inversion Layers

S. Kawaji, I. Takayanagi, Y. Kawaguchi, 1987 .

A very low column FPN and row temporal noise 8.9 M-pixel, 60 fps CMOS image sensor with 14bit column parallel SA- ADC

I. Takayanagi, J. Gleason, S. Matsuo, 2008, 2008 IEEE Symposium on VLSI Circuits.

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process †

Isao Takayanagi, Kazuya Mori, Hirofumi Abe, 2018, Sensors.

High-Resolution CMOS Video Image Sensors

Isao Takayanagi, Junichi Nakamura, J. Nakamura, 2013, Proceedings of the IEEE.

The operation mechanism of a charge modulation device (CMD) image sensor

I. Takayanagi, K. Matsumoto, T. Nakamura, 1991 .

A low dark current stacked CMOS-APS for charged particle imaging

J. Nakamura, I. Takayanagi, E.-S. Eid, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Noise characteristics of stacked CMOS active pixel sensor for charged particles

J. Nakamura, H. Yurimoto, T. Kunihiro, 2001 .

Dark current reduction in stacked-type CMOS-APS for charged particle imaging

Junichi Nakamura, Eric R. Fossum, Isao Takayanagi, 2003 .

Output characteristics of stacked CMOS‐type active pixel sensor for charged particles

J. Nakamura, H. Yurimoto, T. Kunihiro, 2001 .

An APS-C format 14b digital CMOS image sensor with a dynamic response pixel

Isao Takayanagi, Xiaofeng Fan, John Ladd, 2011, 2011 IEEE International Solid-State Circuits Conference.

A 4.6-μm, 127-dB Dynamic Range, Ultra-Low Power Stacked Digital Pixel Sensor With Overlapped Triple Quantization

S. Wuu, K. Mori, J. Nakamura, 2022, IEEE Transactions on Electron Devices.

A 4.0 μm Stacked Digital Pixel Sensor Operating in a Dual Quantization Mode for High Dynamic Range

S. Wuu, H. Chien, K. Mori, 2022, IEEE Transactions on Electron Devices.

An Area-Efficient up/down Double-Sampling Circuit for a LOFIC CMOS Image Sensor

I. Takayanagi, K. Miyauchi, S. Okura, 2023, Sensors.

A 1 1/4 inch 8.3M pixel digital output CMOS APS for UDTV application

I. Takayanagi, M. Shirakawa, J. Moholt, 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..