S. Rakshit

发表

Frequency responses of graded-bandgap low-noise avalanche photodiodes

S. Rakshit, R. Sarin, 1985, IEEE Transactions on Electron Devices.

Reflectivity dependence of the junction temperature rise and the stimulated light power in GaAs junction lasers operated continuously at 77° K

S. Biswas, S. Rakshit, A. Chakravarti, 1971 .

Dependence of the total stimulated light power and the gain factor in GaAs junction lasers on laser length

S. Rakshit, A. Chakravarti, 1969 .

Dependence of the maximum time duration of the output pulse and adiabatic heating in GaAs junction lasers on laser reflectivity

S. Biswas, S. Rakshit, A. Chakravarti, 1969 .

Dependence of the differential external quantum efficiency and gain in GaAs laser diodes on laser reflectivity

S. Biswas, S. Rakshit, A. Chakravarti, 1969 .

On the dependence of the differential external quantum efficiency and gain in GaAs laser diodes on laser length

S. Biswas, S. Rakshit, A. Chakravarti, 1969 .

Dependence of the total stimulated light power in GaAs junction lasers on laser reflectivity

S. Biswas, S. Rakshit, A. Chakravarti, 1969 .

Temperature dependence of the total stimulated light power from semiconductor junction lasers

S. Biswas, S. Rakshit, A. Chakravarti, 1969 .

Multiple Beam Interference in a Relativistic Medium

S. Rakshit, 2016 .

Doping dependence of the mode spectrum in GaAs junction lasers operated at a constant current above threshold

S. Biswas, S. Rakshit, A. Chakravarti, 1969 .

Influence of inhomogeneous distribution and lifetime of the minority carriers on the temperature dependence of the threshold current in EBP lasers using p-type GaAs

S. Rakshit, D. Parui, A. N. Ghakravarti, 1974 .

Noise in multi-heterostructure avalanche photodetectors

N. Chakraborti, S. Rakshit, 1982, 1982 International Electron Devices Meeting.

Dependence of the junction temperature rise on laser length in GaAs laser diodes operated continuously at 77°K

S. Biswas, S. Rakshit, A. Chakravarti, 1970 .

Effect of increasing beam voltage on the internal quantum efficiency of spontaneous emission in electron-beam-excited p-type GaAs

S. Biswas, S. Rakshit, A. Chakravarti, 1972 .

Spontaneous emission spectrum in n-type GaAs of different doping concentrations excited by a 40 kV electron beam at 300 K

S. Biswas, S. Rakshit, A. Chakravarti, 1972 .

Doping dependence of the energy of peak spontaneous emission from n‐type GaAs excited by a 40 kV electron beam at 300 °K

S. Biswas, S. Rakshit, A. Chakravarti, 1971 .

Doping dependence of the internal quantum efficiency of spontaneous electron‐hole recombination in n‐type samples of GaAs excited by a 30 kV electron beam at 300 °K

S. Biswas, S. Rakshit, A. Chakravarti, 1971 .

Temperature dependence of the internal quantum efficiency of spontaneous emission in p-type GaAs excited by a 30 kV electron beam

S. Biswas, S. Rakshit, A. Chakravarti, 1971 .

A Coalition of Single Slit and Double Slit Diffraction

S. Rakshit, 2016, 1606.00254.

On the changes in optical interferometry induced by the relativistic motion of an optical medium

S. Rakshit, 2016, 1603.07446.

Generation of N-slit Interference Pattern Using Two slits

S. Rakshit, 2016 .