F. Mondon

Simplified 0.35-μm flash EEPROM process using high-temperature oxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheral transistors gate oxide

G. Reimbold, F. Martin, B. Guillaumot, 1997, IEEE Electron Device Letters.

Electrostatic Clamping Applied to Semiconductor Plasma Processing I . Theoretical Modeling

L. Peccoud, F. Mondon, J. ‐F. Daviet, 1993 .

Electrostatic Clamping Applied to Semiconductor Plasma Processing II . Experimental Results

L. Peccoud, F. Mondon, J. ‐F. Daviet, 1993 .

On positive charge annihilation and stress-induced leakage current decrease

C. Petit, A. Meinertzhagen, M. Jourdain, 1999 .

Stress-induced leakage current reduction by a low field of opposite polarity to the stress field

C. Petit, A. Meinertzhagen, M. Jourdain, 1998 .

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

Didier Goguenheim, Dominique Vuillaume, Alain Bravaix, 1997 .

MIM HfO/sub 2/ low leakage capacitors for eDRAM integration at interconnect levels

Yves Morand, Gilles Reimbold, Serge Blonkowski, 2003, Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

Didier Goguenheim, Dominique Vuillaume, Alain Bravaix, 1999 .

High Temperature Oxide (HTO) for non volatile memories applications

G. Reimbold, Bernard Guillaumot, P. Candelier, 1997 .