X. Yu

A study on gate-induced junction breakdown

K. Y. Lim, X. Yu, D. Yeo, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

Mitsuru Takenaka, Shinichi Takagi, M. Takenaka, 2016 .

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

S. Takagi, M. Takenaka, R. Zhang, 2015 .

Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding

Mitsuru Takenaka, Shinichi Takagi, J. Kang, 2016 .