H. Makabe

290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

J. Nishizawa, P. Płotka, T. Kurabayashi, 2005 .

706-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

Jun-ichi Nishizawa, P. Plotka, Toru Kurabayashi, 2008 .

GaAs TUNNETT diodes oscillating at 430-655 GHz in CW fundamental mode

P. Plotka, P. Płotka, T. Kurabayashi, 2005, IEEE Microwave and Wireless Components Letters.

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

J. Nishizawa, K. Suto, O. Ito, 2004 .

Oscillation frequency control of 60 GHz-band TUNNETT diodes

J. Nishizawa, P. Płotka, T. Kurabayashi, 2002 .

240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

J. Nishizawa, P. Płotka, T. Kurabayashi, 2003 .

Continuous millimeter-wave TUNNETT diode system for inspection applications

J. Nishizawa, P. Płotka, T. Kurabayashi, 2006, 2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics.