Q. Fan

发表

GaN heterojunction FET device Fabrication, Characterization and Modeling

Q. Fan, 2009 .

Study of SiNx and SiO2 passivation of GaN surfaces

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2007 .

A comprehensive study of enhanced photoluminescence on monolayer MoS2 with Ag nano-ridge structures

Guofeng Yang, Yueke Wang, X. Gu, 2020 .

Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Hadis Morkoç, Vitaliy Avrutin, Bo Xiao, 2009, OPTO.

Interface Engineering Enabling Next Generation GaN-on-Diamond Power Devices

Xing fa Gu, Yimin Gu, Yun Zhang, 2021, Journal of Electronic Materials.

InAs passivated GaSb thermo-photovoltaic cells on a GaAs substrate grown by MOVPE

C. Bumby, L. May, R. Nicholas, 2004 .

Properties of isotype n-ZnO/n-GaN heterostructures studied by I–V–T and electron beam induced current methods

H. Morkoç, L. Chernyak, Y. Alivov, 2008 .

The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

H. Morkoç, K. Zhu, V. Avrutin, 2006 .

Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films

H. Morkoç, N. Biyikli, J. Xie, 2006 .

High efficiency n-ZnO/p-SiC heterostructure photodiodes grown by plasma-assisted molecular-beam epitaxy

H. Morkoç, S. Doğan, J. Xie, 2005 .

Reactive ion etch damage on GaN and its recovery

Sang-Jun Cho, Hadis Morkoç, Xianfeng Ni, 2006 .

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Ekmel Ozbay, Hadis Morkoç, Ümit Özgür, 2009 .

The Electronic and Optical Properties of InSe-GeTe Heterobilayer via Applying Biaxial Strain

F. Xie, Guofeng Yang, Yueke Wang, 2019, Nanomaterials.

Surface Dispersion Suppression in High-Frequency GaN Devices

Xing fa Gu, X. Ni, Q. Fan, 2022, Crystals.

Electrically tunable magnetism and unique intralayer charge transfer in Janus monolayer MnSSe for spintronics applications

Yiding Liu, Q. Fan, Gang Yao, 2022, Physical Review B.

Epitaxial growth of ReS2 nanobelts by chemical vapor deposition

Yi-xin Zhang, Guofeng Yang, X. Gu, 2019, Materials Research Express.

Two-dimensional drift-diffusion simulation of GaN HFETs

Hadis Morkoç, Q. Fan, H. Morkoç, 2011, OPTO.

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy

Hadis Morkoç, Xianfeng Ni, Q. Fan, 2006 .

Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy

H. Morkoç, S. Doğan, J. Xie, 2005 .

Ferroelectric PZT/AlGaN/GaN field effect transistors

Ya. I. Alivov, Q. Fan, Bo Xiao, 2006, SPIE OPTO.

Band offset measurements of ZnO∕6H-SiC heterostructure system

H. Morkoç, Y. Alivov, Q. Fan, 2006 .

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

Sang-Jun Cho, Hadis Morkoç, Q. Fan, 2006 .

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel

H. Morkoç, Ü. Özgür, J. Leach, 2010 .

Electrical defects in AlGaN and InAlN

Hadis Morkoç, J. Xie, Jacob H. Leach, 2009, OPTO.

Electronic and optical properties of InN-MTe2(M=Mo, W) heterostructures from first-principles

Guofeng Yang, Yueke Wang, X. Gu, 2020 .

Extraction efficiency simulation in deep ultraviolet AlGaN light emitting diodes

Xing fa Gu, X. Ni, B. Hua, 2021, Optical and Quantum Electronics.

Analysis of High-Temperature Carrier Transport Mechanisms for High Al-Content Al0.6Ga0.4N MSM Photodetectors

A. Danner, F. Xie, Guofeng Yang, 2020, IEEE Transactions on Electron Devices.

Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET

Qian Fan, Hadis Morkoç, Jacob H. Leach, 2010, Proceedings of the IEEE.

Van der Waals heterostructures of Janus XSeTe (X = Mo, W) and arsenene monolayers: A first principles study

F. Xie, Guofeng Yang, X. Gu, 2020 .

n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor

Qian Fan, Hadis Morkoç, Ya. I. Alivov, 2010, Microelectronics Reliability.