S. Gourrier

发表

Plasma anodization of silicon at room temperature

P. Dimitriou, S. Gourrier, 1981 .

Enhanced plasma oxidation at low temperature using a thin solid electrolyte film

J. Theeten, J. Perrière, J. Siejka, 1981 .

Optical Assessment of the Interaction Between EL2 and EL6 Levels in Boron Implanted GaAs

A. Cornet, J. Samitier, J. Morante, 1987 .

Analysis of the near‐intrinsic and extrinsic photocapacitance due to the EL2 level in boron‐implanted GaAs

J. Samitier, A. Pérez, S. Gourrier, 1986 .

Growth of dielectric films on semiconductors and metals using a multipole plasma

J. Theeten, P. Dimitriou, S. Gourrier, 1981 .

Interactions between H2 and N2 plasmas and a GaAs(100) surface: Chemical and electronic properties

S. Gourrier, P. Friedel, 1983 .

Core level photoemission study of the interaction of plasmas with real GaAs(100) surfaces

P. Larsen, S. Gourrier, P. Friedel, 1985 .

Plasma Passivation Scheme for III–V Compound Semiconductor Surfaces

J. Theeten, S. Gourrier, P. Friedel, 1984 .

Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasma

P. Larsen, L. Smit, S. Gourrier, 1983 .

Study of the interaction of plasmas with III–V semiconductor surfaces, application to passivation

M. Erman, J. Theeten, S. Gourrier, 1986 .

Photoemission studies of the interaction of hydrogen plasmas with GaAs(001)

P. Larsen, S. Gourrier, P. Friedel, 1984 .

Kinetics of GaAs Plasma Anodization

P. Dimitriou, S. Gourrier, P. Friedel, 1981 .

Interface properties of metal/oxide/semiconductor and metal/insulator/semiconductor structures on Ga1−xInxAs with x=0.35 and 0.10

S. Gourrier, P. Friedel, J. Chané, 1983 .

Plasma anodisation of Ga1-xInxAs (x=0.35 and 0.10) and study of MOS interface properties

S. Gourrier, J. Chané, 1982 .

Oxidation of GaAs in an oxygen multipole plasma

A. Mircea, M. Bacal, S. Gourrier, 1980 .

Review of oxidation processes in plasmas

S. Gourrier, P. Friedel, 1983 .

Review of oxide formation in a plasma

M. Bacal, S. Gourrier, 1981 .

Spatially Resolved Ellipsometry for Semiconductor Process Control: Application to GaInAs MIS Structures

M. Renaud, M. Erman, S. Gourrier, 1987 .

Optical behavior of the U band in relation to EL2 and EL6 levels in boron‐implanted GaAs

J. Samitier, S. Gourrier, L. Giraudet, 1986 .

Current drift mechanism in In0.53Ga0.47As depletion mode metal‐insulator field‐effect transistors

S. Gourrier, M. Taillepied, 1986 .