V. A. Presnov

发表

Effects of deep traps on MIS‐capacitors

V. Bashenov, V. Dyakov, V. A. Presnov, 1970 .

On Deep Acceptors in Iron-Doped Gallium Arsenide

V. Bashenov, V. A. Presnov, S. P. Fedotov, 1967 .

The effect of high pressure on electrophysical properties of monocrystals of p- and n-GaAs under various temperatures

I. Vikulin, V. A. Presnov, I. Sviridov, 1972 .

Liquid phase epitaxy of GaAs on Si substrates

V. A. Presnov, A. I. Kazakov, V. Brovkin, 1988 .

Modified conservation laws in the classical kepler problem

V. A. Presnov, Y. A. Fedorin, 1979 .

Width of ESR Line of Transition Metals in Gallium Arsenide

V. Bashenov, V. A. Presnov, S. P. Fedotov, 1969 .

The electrophysical properties of InBi

V. A. Presnov, M. Krivov, E. Mališová, 1967 .

The photoelectric properties of polycrystalline films of gallium arsenide

V. A. Presnov, L. G. Lavrent’eva, I. Kovalev, 1967 .

Effect of Amine Adsorption on the Surface Charge of Germanium

V. A. Presnov, L. L. Lyuze, 1964 .

Signal processing in devices of oscillistor type

I. Vikulin, V. A. Presnov, L. L. Lyuze, 1968, Soviet Physics Journal.

Some remarks on the antishielding effect in iii‐v compounds

V. Bashenov, V. A. Presnov, S. P. Fedotov, 1968 .

Interzone diffusion in n-GaAs by study of resistivity at high pressure

V. A. Presnov, I. Sviridov, 1972 .

Effect of axial pressure on the capacitance of metal-tunneling-transparent oxide-semiconductor structures

V. A. Presnov, O. P. Kanchukovskii, P. P. Fastykovskii, 1988 .