A. Glachant

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Chapter 1 Silica, silicon nitride and oxynitride thin films: An overview of fabrication techniques, properties and applications

B. Balland, A. Glachant, 1999 .

Electron beam-assisted formation of silicon oxynitride layers (3.5 nm) on silicon at moderate temperatures using NO gas: growth kinetics and mechanisms

A. Glachant, P. Poveda, 1999 .

Nitridation of SiO2 thin films at low ammonia pressures: Composition and electrical properties

B. Balland, A. Glachant, C. Plossu, 1990 .

Perylene tetracarboxylic diimide ultrathin film deposition on Pt(1 0 0): a LEED, AES, REELS and STM study

A. Glachant, O. Guillermet, J. Hoarau, 2004 .

A first order two-dimensional melting transition : methane adsorbed on (0001) graphite

J. Coulomb, J. G. Dash, A. Glachant, 1979 .

Electronic promotion of silicon oxynitridation at room temperature by alkali-metal catalysts

P. Soukiassian, A. Glachant, S. Kim, 1993 .

Photon- and catalysis-assisted silicon oxynitridation at room temperature: a comparative study

P. Soukiassian, A. Glachant, 1993 .

Phase transitions on stepped and disordered surfaces: Xe adsorbed on Cu and NaCl single crystal surfaces

U. Bardi, A. Glachant, M. Bienfait, 1980 .

Selective adsorption and interaction potential of {He}/{Xe}-graphite

G. Bracco, A. Glachant, R. Tatarek, 1984 .

AES and LEED studies of xenon adsorption on (100)NaCl

J. Coulomb, A. Glachant, J. Bibérian, 1976 .

Thermal nitridation of SiO2 thin films in NH3+H2O (or O2) mixtures

B. Balland, A. Glachant, J. Bureau, 1990 .

Kinetics of Si(100) nitridation first stages by ammonia: Electron‐ beam‐induced thin film growth at room temperature

A. Glachant, D. Saidi, 1985 .

A LEED, AES and TDS study of very thin nitride film growth on Si(100) by direct thermal nitridation in NH3

A. Glachant, D. Saidi, J. Delord, 1986 .

Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection

V. L. Thanh, J. Derrien, L. Michez, 2008 .

Thermodynamics and kinetics of Xe monolayer adsorption on Cu(100) by LEED and AES

U. Bardi, A. Glachant, 1979 .

LEED, AES and work function measurements on clean and cesium covered polar faces of GaP

J. Derrien, F. d'Avitaya, A. Glachant, 1975 .

Neutron diffraction study of the commensurate-incommensurate phase transition in a methane submonolayer adsorbed on graphite

G. Bomchil, J. Coulomb, A. Glachant, 1984 .

Monolayer adsorption of Kr and Xe on metal surfaces: Structures and uniaxial phase transitions on Cu(110)

M. Jaubert, A. Glachant, M. Bienfait, 1982 .

Uniaxial Commensurate-Incommensurate Transition in Surface Films: Xe Adsorbed on Cu(110)

M. Jaubert, A. Glachant, M. Bienfait, 1981 .

Surface science lettersUniaxial compressibility of a complete monolayer of Xe adsorbed on Cu(110)

M. Jaubert, A. Glachant, M. Bienfait, 1984 .

Unmonochromatized synchrotron radiation promoted silicon oxynitridation at room temperature

P. Soukiassian, A. Papageorgopoulos, A. Glachant, 1991 .

Photoinduced oxynitride formation on semiconductors: NO on Si(111)2 × 1

J. Peng, P. Soukiassian, A. Glachant, 1992 .

Uniaxial compressibility of a complete monolayer of Xe adsorbed on Cu(110)

M. Jaubert, A. Glachant, M. Bienfait, 1984 .

Energy gap-determination of a carbon contaminated thermal silicon oxide thin film using reflection electron energy loss spectroscopy

A. Glachant, P. Poveda, 1997 .

Nitridation of Sio2thin films in low ammonia pressures: An AES, SIMS, XPS and Raman spectroscopy investigation

A. Ronda, B. Balland, A. Glachant, 1988 .

High‐temperature thermal nitridation and low‐temperature electron‐beam‐enhanced nitridation of SiO2 thin films

A. Ronda, J. Dupuy, B. Balland, 1987 .

Improved surface nitridation of SiO2 thin films in low ammonia pressures

A. Ronda, B. Balland, A. Glachant, 1987 .

Structural study of vapour phase deposited 3,4,9,10-perylene tetracarboxylicacid diimide: Comparison between single crystal and ultra thin films grown on Pt(100)

M. Mossoyan-Deneux, M. Giorgi, A. Glachant, 2006 .

Low energy electron-beam-enhanced formation of ultrathin insulating silicon oxynitride layers on Si(100) at moderate temperatures: in situ determination of the band gap energy using electron energy loss spectroscopy

A. Glachant, P. Poveda, 1995 .

Effects of addition of oxygen and water vapor in high thermal nitridation processes of SiO2 thin films

B. Balland, A. Glachant, J. Dubray, 1989 .

Carbon diffusion and reactivity in Mn5Ge3 thin films

V. L. Thanh, L. Michez, C. Robert-Goumet, 2012 .

Surface science lettersDiffraction of He atoms from a Xe overlayer adsorbed on graphite (0001)

G. Bracco, A. Glachant, R. Tatarek, 1983 .

Diffraction of He atoms from A Xe overlayer adsorbed on graphite (0001)

G. Bracco, A. Glachant, R. Tatarek, 1983 .

Growth and structure of rapid thermal silicon oxides and nitroxides studied by spectroellipsometry and Auger electron spectroscopy

D. Barbier, A. Gagnaire, D. Barbier, 1994 .

Constructive versus destructive effects of electron beam irradiation: an application to plasma nitridation of SiO2 thin films

A. Glachant, 1995 .