P. Blaise

New insight on the charge trapping mechanisms of SiN-based memory by atomistic simulations and electrical modeling

G. Reimbold, D. Lafond, E. Vianello, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling

E. Vianello, G. Molas, L. Perniola, 2011, IEEE Transactions on Electron Devices.

Microscopic understanding of the low resistance state retention in HfO2 and HfAlO based RRAM

B. DeSalvo, S. Jeannot, Y. Nishi, 2014, 2014 IEEE International Electron Devices Meeting.

Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling

Y. Nishi, E. Vianello, G. Molas, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Improvement of HfO2 based RRAM array performances by local Si implantation

E. Vianello, L. Grenouillet, E. Nowak, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices

G. Ghibaudo, A. Calborean, E. Jalaguier, 2011, 2009 IEEE International Memory Workshop.

Experimental Investigation and Empirical Modeling of the Set and Reset Kinetics of Ag-GeS2 Conductive Bridging Memories

E. Vianello, G. Molas, C. Cagli, 2012, 2012 4th IEEE International Memory Workshop.

Effect of SET temperature on data retention performances of HfO2-based RRAM cells

C. Muller, S. Jeannot, E. Vianello, 2014, 2014 IEEE 6th International Memory Workshop (IMW).