K. Hasegawa

Bipolar technology for 0.5-micron-wide base transistor with an ECL gate delay of 21.5 picoseconds

T. Takada, S. Nakamura, I. Kato, 1992, 1992 International Technical Digest on Electron Devices Meeting.

L/S-band 140 W push-pull power AlGaAs/GaAs HFETs for digital cellular base stations

I. Takenaka, K. Asano, K. Ishikura, 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

L/S-band 140 W push-pull power AlGaAs/GaAs HFETs for digital cellular base stations

Masaaki Kuzuhara, I. Takenaka, K. Asano, 1998 .

Improvement of Intermodulation Distortion Asymmetry Characteristics With Wideband Microwave Signals in High Power Amplifiers

I. Takenaka, K. Asano, N. Iwata, 2008, IEEE Transactions on Microwave Theory and Techniques.

A Distortion-Cancelled Doherty High-Power Amplifier Using 28-V GaAs Heterojunction FETs for W-CDMA Base Stations

I. Takenaka, K. Asano, N. Iwata, 2006, IEEE Transactions on Microwave Theory and Techniques.