S. Karboyan

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

G. Meneghesso, M. Meneghini, M. Tack, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Analysis of barrier inhomogeneities in AlGaN/GaN HEMTs' Schottky diodes by I-V-T measurements

J. G. Tartarin, B. Lambert, S. Karboyan, 2013, 2013 European Microwave Integrated Circuit Conference.

I-DLTS, electrical lag and low frequency noise measurements of trapping effects in AlGaN/GaN HEMT for reliability studies

L. Bary, J. G. Tartarin, B. Lambert, 2011, 2011 6th European Microwave Integrated Circuit Conference.

Generation-recombination traps in AlGaN/GaN HEMT analyzed by time-domain and frequency-domain measurements: Impact of HTRB stress on short term and long term memory effects

J. G. Tartarin, B. Lambert, J. Tartarin, 2013, 2013 IEEE International Wireless Symposium (IWS).

Negative dynamic Ron in AlGaN/GaN power devices

G. Meneghesso, M. Meneghini, M. Tack, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).