A. El-Hdiy

Study of defects induced by high-electric-field stress into a thin gate oxide (11 nm) of metal-oxide-semiconductor capacitors

Dominique Vuillaume, C. Petit, M. Jourdain, 1993 .

Relaxation of positive charge during bidirectional electric stress on metal–oxide–silicon capacitors

A. El-Hdiy, Dj. Ziane, 1999 .

Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures

Rachid Bouchakour, Dominique Vuillaume, M. Jourdain, 1993 .

Positive charge and interface state generation in a thin gate oxide (30 nm) metal‐oxide‐semiconductor capacitor

A. El-Hdiy, 1994 .

Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies

Dominique Vuillaume, M. Jourdain, D. Vuillaume, 1999 .